An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided.

A light detection apparatus according to an embodiment includes a first semiconductor region having a first conductivity type, a second semiconductor region having a second conductivity type, a third semiconductor region having the first conductivity type, and a circuit unit configured to count the number of generation times of an avalanche current, wherein a reverse bias voltage for causing avalanche multiplication of the signal charge is applied to the second semiconductor region and the third semiconductor region, and the signal charge is accumulated in the first semiconductor region when the potential barrier is formed, wherein the control unit controls the height of the potential barrier.

A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.

Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.

Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.

An electromagnetic wave detector comprises: p-type and n-type graphenes arranged side by side on an insulating layer; a first electrode and a second electrode opposing each other via the graphenes; a gate electrode for applying an operation voltage to the p-type and n-type graphenes; a balance circuit connected between two second electrodes; and a detection circuit. The p-type graphene has a Dirac point voltage higher than the operation voltage. The n-type graphene has a Dirac point voltage lower than the operation voltage. In a state in which no electromagnetic wave is incident on the graphenes, the balance circuit places the first electrode and the second electrode at the same potential. In a state in which an electromagnetic wave is incident on the p-type and n-type graphenes, the detection circuit detects an electric signal between the second electrodes, and outputs an electric signal in the state in which the electromagnetic wave is incident.

In accordance with various embodiments of the disclosed subject matter, a phototransistor comprises an NPN or PNP phototransistor having a base including a Si-region, a Ge-region, and a Ge-Si interface region wherein photons are absorbed in the Ge region and conduction-band electrons are attracted to the interface region such that the electrons' mobility is enhanced thereby.

A lateral interband Type II engineered (LITE) detector is provided. LITE detectors use engineered heterostructures to spatially separate electrons and holes into separate layers. The device may have two configurations, a positive intrinsic (PIN) configuration and a BJT (Bipolar junction transistor) configuration. The PIN configuration may have a wide bandgap (WBG) layer that transports the holes above a narrow bandgap (NBG) absorber layer that absorbs the target radiation and transports the electrons. The BJT configuration may have a WBG layer operating as a BJT above an NBG layer. In both configurations, the LITE design uses a Type II staggered offset between the NBG layers and the WBG layers that provides a built-in field for the holes to drift from an absorber region to a transporter region.

An opto-electronic High Electron Mobility Transistor (HEMT) may include a current channel including a two-dimensional electron gas (2DEG). The opto-electronic HEMT may further include a photoelectric bipolar transistor embedded within at least one of a source and a drain of the HEMT, the photoelectric bipolar transistor being in series with the current channel of the HEMT.