A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A photodiode manufacturing method and a photodiode thereof. The method comprises: doping a second type of material in a first region of an epitaxial layer to form a first doped region; forming a transfer gate on the upper surface of the epitaxial layer, one side of the transfer gate being connected to the first doped region; doping the second type of material in a second region of the epitaxial layer to form a second doped region, the second doped region being connected to the first doped region; and doping the second type of material in a third region of the epitaxial layer to obtain an output region, the other side of the transfer gate being connected to the output region.

Through selective incorporation of high carrier mobility graphene monolayers into low cost, NIR-sensitive SiGe detector layer structures, a device combining beneficial features from both technologies can be achieved. The SiGe in such hybrid SiGe/graphene detector devices serves as the NIR absorbing layer, or as the quantum dot material in certain device iterations. The bandgap of this SiGe layer where absorption of photons and photogeneration of carriers mainly takes place may be tuned by varying the concentrations of Ge in the SixGe1-x material. This bandgap and the thickness of this layer largely impact the degree and spectral characteristics of absorption properties, and thus the quantum efficiency or responsivity of the device. The main function and utility of the graphene monolayers, which are nearly transparent to incident light, is to facilitate the extraction and transport of electron and hole carriers from the SiGe absorbing layer through the device.

Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

Photo-detectors disclosed include at least one of a thin film or a heterostructure of photo-sensitive material and a pair of Ohmic contacts coupled to the at least one of the thin film or the heterostructure. The at least one of the thin film or the heterostructure is configured to be under a strain gradient to induce shift current flow within the material to perform photo-detection in a frequency range that includes a mid-infrared frequency range. The photo-detectors provided for can include a variety of configurations, such as a lateral configuration or a vertical configuration, and can operate in self-powered and negative illumination regimes. Associated methods are also provided, which can include inducing a strain gradient and performing photo-detection in a frequency range that includes a mid-infrared frequency range.

A photodetection film includes a photodetection transistor. The photodetection transistor includes a gate electrode, a gate insulating layer surroundingly formed on the gate electrode, at least one drain terminal disposed on the gate insulating layer and is spaced apart from the gate electrode, at least one source terminal disposed on the gate insulating layer and is spaced apart from the gate electrode and the at least one drain terminal, and a light-absorbing semiconductor layer disposed on the gate insulating layer and extends between the drain and source terminals. A photodetection sensor, a photodetection display apparatus, and a method of making the photodetection film are also disclosed.

A photodetection film includes a photodetection transistor. The photodetection transistor includes a gate electrode, a gate insulating layer surroundingly formed on the gate electrode, at least one drain terminal disposed on the gate insulating layer and is spaced apart from the gate electrode, at least one source terminal disposed on the gate insulating layer and is spaced apart from the gate electrode and the at least one drain terminal, and a light-absorbing semiconductor layer disposed on the gate insulating layer and extends between the drain and source terminals. A photodetection sensor, a photodetection display apparatus, and a method of making the photodetection film are also disclosed.

In certain examples, methods and photo-responsive structures are directed to devices involving a diamond-based photoconductive switch having a doped diamond-grown material in the switch. The doped diamond-grown material may be formed from different gases combined on a diamond seed, such that as grown, the diamond-based material manifests a controlled dopant concentration level of a polarity type and over a depth of optical absorption sufficient to ionize the dopants in response to an optical signal.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate including an active region, a first impurity region and a second impurity region formed in the active region, a photoelectric conversion region disposed over the semiconductor substrate to be directly coupled to the first impurity region and configured to generate photocharges in response to incident light and transmit the generated photocharges to the first impurity region, a switching element disposed coupled to the first impurity region and the second impurity region and configured to transmit the photocharges stored in the first impurity region to the second impurity region, an insulation structure disposed on sides of the photoelectric conversion region and a plurality of conductive lines disposed in the insulation structure and configured to read out an electrical image signal corresponding to the photocharges generated by the photoelectric conversion region.