Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

A photosensor device includes a substrate, a graphene layer provided on the substrate, a pair of electrodes electrically connected to the graphene layer, and a passivation layer formed of a resin and configured to cover the graphene layer. The graphene layer has holes which are periodically arranged, and the passivation layer is provided with openings that communicate with the holes. The side surfaces of the holes and the inner walls of the openings are continuously covered with an insulating thin film.

A terahertz detector circuit can include a high electron mobility transistor (HEMT) having multiple gates that can be controlled by gate signals to generate a gate-induced modulation pattern in a two-dimensional electron gas (2DEG) of the HEMT. When the gate induced modulation pattern substantially matches a signal induced modulation pattern generated by an incident terahertz signal then a detection efficiency of the incident terahertz signal is improved. Accordingly, an electronically tunable THz detector with high efficiency can be realized. When these THz detectors are arranged in an array and electrically coupled, THz images and/or multi-spectral THz images may be generated.

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

A photosensor device includes a substrate, a graphene layer provided on the substrate, a pair of electrodes electrically connected to the graphene layer, and a passivation layer formed of a resin and configured to cover the graphene layer. The graphene layer has holes which are periodically arranged, and the passivation layer is provided with openings that communicate with the holes. The side surfaces of the holes and the inner walls of the openings are continuously covered with an insulating thin film.

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair doped region pair in the germanium layer is configured as an e-lens of the germanium-based sensor.

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair doped region pair in the germanium layer is configured as an e-lens of the germanium-based sensor.