An array substrate for an X-ray detector and an X-ray detector including the reduces or minimizes a leakage current caused by etching of a PIN layer, and also reduces or minimizes light reaction of the PIN layer within a non-pixel region. The array substrate for the X-ray detector includes an integrated PIN layer formed to cover all pixel regions. Upper electrodes, which are spaced apart from each other according to individual pixel regions, are disposed over the PIN layer. A light shielding portion is disposed between neighboring upper electrodes.

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied. At least one or more n+-regions (2) are situated in the central portion of the front face of the substrate and occupy most of the surface area, forming a sensitive zone of the sensor, and at least two n+-regions and two p+-regions are formed as annular elements (guard rings) (3), arranged concentrically in a non-sensitive zone along the periphery of the substrate (1), in order to reduce the amount of surface current and to provide for a smooth drop in potential from the sensitive region to the periphery of the device. The number of n+-regions (2) that form the matrix, i.e. the sensitive zone, of the sensor is equal to 2k, where k can be equal to 0one region. Ports (9) for connecting leads are situated around the edges of the substrate in its non-sensitive region. The n+-regions (2) which form the sensitive zone of the sensor have profiled portions along the edges in the form of a series of recesses (12).

The invention relates to semiconductor devices for converting ionizing radiation into an electrical signal. The present ionizing radiation sensor has an n+-i-p+ structure, produced using the planar process. The sensor contains an i-region in the form of a high-resistivity substrate of high-purity float-zone silicon with p-type conductivity, having on its front face n+-regions (2, 3), an SiO2 layer (4), aluminium metallization (5), and a passivation layer. On the front face of the substrate (1) n-regions (2) are formed by ion implantation; a masking layer of SiO2 (layer 4) is grown; aluminium metallization (5) is deposited; and a passivation layer (6) is applied. At least one or more n+-regions (2) are situated in the central portion of the front face of the substrate and occupy most of the surface area, forming a sensitive zone of the sensor, and at least two n+-regions and two p+-regions are formed as annular elements (guard rings) (3), arranged concentrically in a non-sensitive zone along the periphery of the substrate (1), in order to reduce the amount of surface current and to provide for a smooth drop in potential from the sensitive region to the periphery of the device. The number of n+-regions (2) that form the matrix, i.e. the sensitive zone, of the sensor is equal to 2k, where k can be equal to 0one region. Ports (9) for connecting leads are situated around the edges of the substrate in its non-sensitive region. The n+-regions (2) which form the sensitive zone of the sensor have profiled portions along the edges in the form of a series of recesses (12).

A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

A semiconductor radiation detector includes: a semiconductor block of a first conductivity type and including majority charge carriers of a first polarity; an electrode embedded on a surface of the semiconductor block, the electrode including a collector embedded on a front surface of the semiconductor block and further electrodes arranged to generate an electric field within the semiconductor block for driving charge carriers of the first polarity generated therein due to incident radiation towards the collector; a radiation entrance window receiving the incident radiation, arranged to cover at least portion of a back surface of the semiconductor block opposite its front surface; and layers having a net charge of the first polarity and substantially covering at least one side surface of the semiconductor block to induce an electric field for passivating the at least one side surface of the semiconductor block so as to reduce leakage currents arising therein.

A semiconductor radiation detector includes: a semiconductor block of a first conductivity type and including majority charge carriers of a first polarity; an electrode embedded on a surface of the semiconductor block, the electrode including a collector embedded on a front surface of the semiconductor block and further electrodes arranged to generate an electric field within the semiconductor block for driving charge carriers of the first polarity generated therein due to incident radiation towards the collector; a radiation entrance window receiving the incident radiation, arranged to cover at least portion of a back surface of the semiconductor block opposite its front surface; and layers having a net charge of the first polarity and substantially covering at least one side surface of the semiconductor block to induce an electric field for passivating the at least one side surface of the semiconductor block so as to reduce leakage currents arising therein.

An off-leakage current of a photodiode is reduced in a photoelectric conversion device. A photoelectric conversion device (100) includes: an oxide semiconductor layer (5) provided on a substrate (1); a passivation film (6) and a planarizing film (7) which are stacked on the oxide semiconductor layer; and a photodiode (9) including a lower electrode (91), a photoelectric conversion layer (92), and an upper electrode (93). The lower electrode is connected to a source electrode (4) via a contact hole provided in the passivation film and the planarizing film. No photoelectric conversion layer is provided directly above the contact hole.

An isotropic neutron detector includes a spherical secondary particle radiator component and a plurality of stacked semiconductor detectors. A first semiconductor detector is coupled to at least a portion of the spherical secondary particle radiator component, forming a portion of a first concentric shell thereover. A second semiconductor detector coupled to at least a portion of the first semiconductor detector, forming a portion of a second concentric shell thereover.