A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

A photo detector including a transistor and a charge storing component is provided. The transistor includes a gate, a source and a drain. The charge storing component is electrically connected with the transistor, and includes a top electrode and a bottom electrode. The source of the transistor, the drain of the transistor and the bottom electrode of the charge storing component are formed of a semiconductor layer.

A photo detector including a transistor and a charge storing component is provided. The transistor includes a gate, a source and a drain. The charge storing component is electrically connected with the transistor, and includes a top electrode and a bottom electrode. The source of the transistor, the drain of the transistor and the bottom electrode of the charge storing component are formed of a semiconductor layer.

An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation. A non-radiation influenced threshold voltage shift may be measured and used in determining whether each logical pair of exposed sensor cells is influenced by radiation exposure.

An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells.

Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.