A display device includes a substrate including a first surface, and a second surface positioned at a side opposite to the first surface; a first light-emitting element located at a lateral side of the substrate; a plurality of light-receiving elements located at a second surface side of the substrate; a plurality of second light-emitting elements located on the first surface of the substrate; and a first drive element controlling driving of the second light-emitting elements based on output of the light-receiving elements. A light-emitting surface of the first light-emitting element is oriented in a first direction. The first direction is parallel to a direction from the first surface toward the second surface. Light-emitting surfaces of the second light-emitting elements are oriented in a second direction. The second direction is from the second surface toward the first surface.

An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

According to an embodiment, a self-powered sensor comprises at least one first layer emitting light in a preset wavelength band by receiving power from an outside, or receiving the emitted light reflected by an object, at least one second layer receiving light and generating a current, and a plurality of connectors each grown between two adjacent ones of the at least one first layer and the at least one second layer, the plurality of connectors transferring the generated current to the outside or transferring the power received from the outside to the at least one first layer and the at least one second layer.

According to an embodiment, a self-powered sensor comprises at least one first layer emitting light in a preset wavelength band by receiving power from an outside, or receiving the emitted light reflected by an object, at least one second layer receiving light and generating a current, and a plurality of connectors each grown between two adjacent ones of the at least one first layer and the at least one second layer, the plurality of connectors transferring the generated current to the outside or transferring the power received from the outside to the at least one first layer and the at least one second layer.

A display apparatus having a plurality of subpixels is provided. The display apparatus includes an array substrate and a counter substrate facing the array substrate. The counter substrate includes a base substrate; an optical compensation device on the base substrate configured to adjust light emitting brightness values of the plurality of subpixels to target brightness values respectively; and a plurality of light shielding walls on the base substrate. The optical compensation device include a plurality of photosensors configured to respectively detect light emitting brightness values of the plurality of subpixels. A respective one of the plurality of light shielding walls is configured to at least partially shield a lateral side of a respective one of the plurality of photosensors from light emitted from adjacent subpixels.

A display panel and manufacturing method thereof, a display device. The display panel includes a base substrate, light-emitting element and a photoelectric conversion structure: the light-emitting element is disposed on the base substrate; the photoelectric conversion structure is disposed on the base substrate and configured to receive a part of light emitted by the light-emitting element, convert energy of light received by the photoelectric conversion structure into electric energy, and supply the electric energy to the light-emitting element.

An arrangement for operating a diode array includes a plurality of LEDs. Each LED is assigned a respective sensor element which is configured to detect a characteristic value representative of a luminous flux of the respective LED. The arrangement also includes a respective supply input for providing a current for light-emitting operation of the respective LED. The arrangement further includes in each case a control unit which is coupled on the input side to the respective supply input and the respective sensor element and on the output side to the respective LED and is configured to control the current for light-emitting operation of the respective LED as a function of the corresponding characteristic value. The arrangement additionally includes a respective supply input for providing a current for light-emitting operation of the respective LED.

Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

The object of the present invention is to provide an ultraviolet-emitting device which achieves suppresses deterioration, and prolonged life of the components used in a light-emitting device while monitoring a light emitting state of the light-emitting element and maintaining an emission intensity. The ultraviolet-emitting device is provided with a light-emitting element configured to emit an ultraviolet ray, a mounting board on which the light-emitting element is placed, and a fluorescent glass element placed at a position irradiated with the ultraviolet ray emitted by the light-emitting element, and placed in a through hole formed through the mounting board, emitting fluorescence in a visible range by excitation of an ultraviolet ray.