An image sensor is disclosed which includes a substrate, a pixel array, a peripheral circuit, an SPAD detector and a VCSEL integrated in the substrate. The peripheral circuit is configured to process an electrical signal obtained from photoelectric conversion in the pixel array, the SPAD detector is configured to convert a first external optical pulse into an electrical pulse to provide a clock signal to the peripheral circuit. The VCSEL is driven by the peripheral circuit and configured to output a second optical pulse. The number of electrical connection terminals in the image sensor is reduced to only two, which is favorable to the miniaturization of the image sensor and simplifies the design of the mating device while allowing the inputting of a first optical pulse and outputting of a second optical pulse. By using these optical signals, extremely high speed and high bandwidth data transmission can be achieved.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

A display panel and manufacturing method thereof, a display device. The display panel includes a base substrate, light-emitting element and a photoelectric conversion structure: the light-emitting element is disposed on the base substrate; the photoelectric conversion structure is disposed on the base substrate and configured to receive a part of light emitted by the light-emitting element, convert energy of light received by the photoelectric conversion structure into electric energy, and supply the electric energy to the light-emitting element.

Disclosed are an array substrate, a preparation method thereof, a display panel and a display device. The array substrate includes a base substrate, a first thin film transistor, a photosensitive sensor, and a dielectric layer. The first thin film is on the base substrate and includes a gate, a drain, a source and a conductive channel between the drain and the source. The photosensitive sensor has the drain of the first thin film transistor as an electrode of the photosensitive sensor. The dielectric layer covers the conductive channel of the first thin film transistor, where the dielectric layer is a metal oxide film.

The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(In.sub.xGa.sub.1-x)Se.sub.2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

Systems and methods for detection of incident light are described. An optical imaging sensor is positioned at least partially within an active display area of a display and is configured to detect and characterize one or more properties of light incident to the active display area of the display.

A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.

A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.