A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.

A method of manufacturing an optical sensor arrangement including the steps of providing a substrate having a surface and providing an integrated circuit comprising an optical detector arranged for detecting light of a desired wavelength range. The integrated circuit and a light emitter are mounted onto the surface, wherein the light emitter is arranged for emitting light in the desired wavelength range. The integrated circuit and the light emitter are electrically connected to each other and to the substrate. A light barrier is formed between the optical detector and the light emitter by dispensing a first optically opaque material along a profile of the integrated circuit. A mold layer is formed by at least partly encapsulating the substrate, the integrated circuit and the light emitter with an optically transparent material. A casing, made from a second optically opaque material, is mounted on the light barrier and thereby encloses a hollow space between the casing and the mold layer.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

The present disclosure relates to an integrated light receiving and emitting device combined with a control circuit wafer and a manufacturing method thereof. The integrated light receiving and emitting device combined with a control circuit wafer according to an exemplary embodiment of the present disclosure includes: a light receiving and emitting unit which has an integrated wafer structure in which a light emitting unit and a light receiving unit are vertically formed on one surface of a single semiconductor substrate by wafer patterning and a control circuit wafer which is combined with the light receiving and emitting unit by vertical bonding to be operated as a single chip device, in which the control circuit wafer is connected to the light emitting unit and the light receiving unit.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

We disclose an optoelectronic module comprising an optoelectronic device operable to emit or detect a wavelength of radiation, an optical element arranged on the optoelectronic device, the optical element being transparent to the wavelength of radiation capable of being emitted or detected by the optoelectronic device, and a wall configured to laterally enclose the optoelectronic device and the optical element, the wall being opaque to the wavelength of radiation capable of being emitted or detected by the optoelectronic device.

A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Device (1) for characterizing a substance (2) capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device (1) comprising: an electroluminescent component (3), at least semi-transparent in the first spectral range, and comprising first and second opposite surfaces (30, 31), the electroluminescent component (3) being suitable for emitting an excitation radiation (Re.sub.1) outgoing from the first surface (30), emitted in a first spectral range according to a circular polarization state; the excitation radiation (Re.sub.1) outgoing from the first surface (30) being able to pass through the electroluminescent component (3), after being reflected, and exit from the second surface (31); a polarization filter (4), arranged to filter the excitation radiation (Re.sub.2) outgoing from the second surface (31), and suitable for modifying the circular polarization state so as to obtain an extinguishing of the excitation radiation (Re.sub.2) outgoing from the second surface (31) of the electroluminescent component (3); a detector (5), arranged to detect the photoluminescence radiation (Rp) outgoing from the polarization filter (4).