H01L31/173

Display Device, Display Module, and Electronic Device

A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.

Molded proximity sensor

A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Molded proximity sensor

A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

OPTOELECTRONIC DEVICE MANUFACTURING METHOD

A method of manufacturing an optoelectronic device, including the steps of: a) forming a photonic device including a plurality of photonic components on a first substrate; b) forming an electronic device including a semiconductor layer coating a second substrate; c) after steps a) and b), bonding the electronic device to the photonic device by direct bonding, and then removing the second substrate; d) after step c), forming, on the upper surface side of the electronic device, electric connection metallizations, the method further including: —after step a) and before step c), a step of deposition of a metal layer continuously extending over the entire upper surface of the device.

Method for producing an optoelectronic component, optoelectronic component, and IR detector
11495706 · 2022-11-08 · ·

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip with a radiation passage surface on a connection carrier, applying a deformable spacer to the radiation passage surface of the semiconductor chip, inserting the connection carrier with the semiconductor chip into a cavity of a tool, deforming, by the tool, the deformable spacer and encapsulating the semiconductor chip with a casting compound.

Method for producing an optoelectronic component, optoelectronic component, and IR detector
11495706 · 2022-11-08 · ·

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip with a radiation passage surface on a connection carrier, applying a deformable spacer to the radiation passage surface of the semiconductor chip, inserting the connection carrier with the semiconductor chip into a cavity of a tool, deforming, by the tool, the deformable spacer and encapsulating the semiconductor chip with a casting compound.

Electronic device

An electronic device includes: a support body including first and second planar portions facing each other, a first connecting portion connecting the first and second planar portions, and a first receptacle surrounded by the first and second planar portions and the first connecting portion; a projection being part of the second planar portion projecting outward from the first receptacle outside the first planar portion in plan view; a wiring substrate including a facing surface facing the support body and an opposite surface opposite to the facing surface, the wiring substrate being folded and attached along an inner surface of the first receptacle and a surface of the projection continuous with the inner surface of the first receptacle; a sensor element mounted on the facing surface attached to the inner surface of the first receptacle; and an antenna mounted on the opposite surface attached to the surface of the projection.

Electronic device

An electronic device includes: a support body including first and second planar portions facing each other, a first connecting portion connecting the first and second planar portions, and a first receptacle surrounded by the first and second planar portions and the first connecting portion; a projection being part of the second planar portion projecting outward from the first receptacle outside the first planar portion in plan view; a wiring substrate including a facing surface facing the support body and an opposite surface opposite to the facing surface, the wiring substrate being folded and attached along an inner surface of the first receptacle and a surface of the projection continuous with the inner surface of the first receptacle; a sensor element mounted on the facing surface attached to the inner surface of the first receptacle; and an antenna mounted on the opposite surface attached to the surface of the projection.

Optical sensor device, method for fabricating the same, display device

An optical sensor device, a method for fabricating the same, and a display device are disclosed. The optical sensor device includes a display region and a non-display region. In the display non-display region, the optical sensor device includes a thin film transistor, including an active layer, a gate insulating layer, a gate layer, a source and drain layer, and an interlayer dielectric layer. In the non-display display region, the optical sensor device includes a first insulating layer, a conductive layer and a second insulating layer which are stacked sequentially. The conductive layer is arranged in a same layer as the source and drain layer or the gate layer. In the non-display display region, the first insulating layer is provided with a first through-hole, and the optical sensor device further includes a photo-sensitive device in the first through-hole.

Optical sensor device, method for fabricating the same, display device

An optical sensor device, a method for fabricating the same, and a display device are disclosed. The optical sensor device includes a display region and a non-display region. In the display non-display region, the optical sensor device includes a thin film transistor, including an active layer, a gate insulating layer, a gate layer, a source and drain layer, and an interlayer dielectric layer. In the non-display display region, the optical sensor device includes a first insulating layer, a conductive layer and a second insulating layer which are stacked sequentially. The conductive layer is arranged in a same layer as the source and drain layer or the gate layer. In the non-display display region, the first insulating layer is provided with a first through-hole, and the optical sensor device further includes a photo-sensitive device in the first through-hole.