The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13) of the substrate so as to free the lower face (20i); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part (12) having a uniform thickness (e.sub.ref) and a level of doping less than that of the lower part; step c) involving removal of the lower part (11) by selective chemical etching with respect to the upper part (12).

The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.

Provided is a deep ultraviolet LED with a design wavelength , including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength . The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

Embodiments of the present disclosure provide a method of manufacturing an optoelectronic device epitaxial structure. The method includes forming a mask pattern on a base substrate, the mask pattern defining a plurality of growth regions on the base substrate, and the plurality of growth regions being separated from each other; and forming an optoelectronic device epitaxial structure in each of the plurality of growth regions; and removing the mask pattern.

A light emitting device includes a substrate, and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, the columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a layered direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form or rectangular lattice form, a line passing through centers of the adjacent columnar portions is inclined relative to m-planes of the columnar portions located between the centers of the adjacent columnar portions, and vertices of the adjacent columnar portions are not placed on the line.

A manufacturing method of a light-emitting device includes steps of: providing a substrate with a top surface, wherein the top surface comprises a plurality of concavo-convex structures; forming a semiconductor stack on the top surface; forming a trench in the semiconductor stack to define a plurality of second semiconductor stacks and expose a first upper surface; forming a scribing region which extends from the first upper surface into the semiconductor stack and exposes a side surface of the semiconductor stack to define a plurality of first semiconductor stacks; removing a portion of the plurality of first semiconductor stacks and a portion of the concavo-convex structures trough the region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the region; wherein the first side wall and the top surface form an acute angle between thereof, 3080.

An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group III nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group III nitride semiconductor layer. A group III nitride semiconductor layer of a second polarity, different from the first polarity, can located adjacent to the active region. A first contact can directly contact the group III nitride semiconductor layer of the first polarity and a second contact can directly contact the group III nitride semiconductor layer of the second polarity. Each of the first and second contacts can include a plurality of openings extending entirely there through and the first and second contacts can form a photonic crystal structure. Some or all of the group III nitride semiconductor layers can be located in nanostructures.

A semiconductor structure, a high electron mobility transistor (HEMT), and a method for fabricating a semiconductor structure are provided. The semiconductor structure includes a substrate, a flowable dielectric material pad layer, a reflow protection layer, and a GaN-based semiconductor layer. The substrate has a pit exposed from a top surface of the substrate. The flowable dielectric material pad layer is formed in the pit, and a top surface of the flowable dielectric material pad layer is below the top surface of the substrate. The reflow protection layer is formed on the substrate and the top surface of the flowable dielectric material pad layer. The GaN-based semiconductor layer is disposed over the substrate.

A micro-light emitting diode (LED) is manufactured using a lift-off substrate that is removed using a laser-lift-off process. A method for manufacturing the LED may include forming an epitaxial structure of the LED on a growth substrate, and attaching an open side of the epitaxial structure with a gallium-based layer and a lift-off substrate, the gallium-based layer between the epitaxial structure and the lift-off substrate. The growth substrate is separated from the epitaxial structure, and the epitaxial structure may be processed into the LED. Light is applied to the gallium-based layer through the lift-off substrate to debond the second portion of the gallium-based layer and the lift-off substrate. The lift-off substrate is separated from the second portion of the gallium-based layer to expose a light emitting surface of the LED on the second portion of the gallium-based layer.

A method for manufacturing an image display device includes: forming, on a substrate, a layer including a first part made of a single-crystal metal; forming a semiconductor layer on the first part, the semiconductor layer including a light-emitting layer; forming a light-emitting element including: a light-emitting surface on the first part, and an upper surface opposite the light-emitting surface; forming a first insulating film that covers the substrate, the layer that comprises the first part, and the light-emitting element; forming a circuit element on the first insulating film; forming a light-shielding member between the circuit element and the light-emitting element; forming a second insulating film covering the first insulating film and the circuit element; forming a first via extending through the first and second insulating films; forming a wiring layer on the second insulating film; removing the substrate; and removing a portion of the first part on the light-emitting surface.