A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; and a p-side current diffusion layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a TiN layer, a Ti layer, a Rh layer, and a TiN layer stacked successively. A film density of the Rh layer included in the p-side contact electrode is larger than a film density of the Rh layer included in the p-side current diffusion layer.

A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; a p-side electrode covering layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a Ti layer, a Rh layer, and a TiN layer stacked successively; a dielectric covering layer that has a connection opening provided on the p-side electrode covering layer and covers the p-side electrode covering layer in a portion different from the connection opening; and a p-side current diffusion layer that connects to the p-side electrode covering layer in the connection opening.

A composition of matter comprising: a plurality of group III-V nanowires or nanopyramids epitaxially grown on a polycrystalline or single-crystalline graphene layer, said graphene layer being directly supported on a crystalline substrate such as a group III-V semiconductor, sapphire, SiC or diamond substrate, wherein the epitaxy, crystal orientation and facet orientations of said nanowires or nanopyramids are directed by the crystalline substrate.

The present disclosure describes epitaxial oxide field effect transistors (FETs). In some embodiments, a FET comprises: a substrate comprising an oxide material; an epitaxial semiconductor layer on the substrate; a gate layer on the epitaxial semiconductor layer; and electrical contacts. In some cases, the epitaxial semiconductor layer can comprise a superlattice comprising a first and a second set of layers comprising oxide materials with a first and second bandgap. The gate layer can comprise an oxide material with a third bandgap, wherein the third bandgap is wider than the first bandgap. In some cases, the epitaxial semiconductor layer can comprise a second oxide material with a first bandgap, wherein the second oxide material comprises single crystal A.sub.xB.sub.1-xO.sub.n, wherein 0<x<1.0, wherein A is Al and/or Ga, wherein B is Mg, Ni, a rare earth, Er, Gd, Ir, Bi, or Li.

A display device may include a plurality of light emitting elements on a substrate and arranged in a matrix form along a first arrangement direction and a second arrangement direction crossing the first arrangement direction, and a first sub pixel area and a second sub pixel area each overlapping at least a portion of the plurality of light emitting elements, spaced from each other in a first direction, and extending in a second direction crossing the first direction. The second direction and the first arrangement direction may be non-parallel to each other.

A method of manufacturing nitride semiconductor substrate, comprising: providing silicon-on-insulator substrate which comprises an underlying silicon layer, a buried silicon dioxide layer and a top silicon layer; forming a first nitride semiconductor layer on the top silicon layer; forming, in the first nitride semiconductor layer, a plurality of notches which expose the top silicon layer; removing the top silicon layer and forming a plurality of protrusions and a plurality of recesses on an upper surface of the buried silicon dioxide layer, wherein each of the plurality of protrusions is in contact with the first nitride semiconductor layer, and there is a gap between each of the plurality of recesses and the first nitride semiconductor layer; and epitaxially growing a second nitride semiconductor layer on the first nitride semiconductor layer, such that the first nitride semiconductor layer and the second nitride semiconductor layer form a nitride semiconductor substrate.

A display device includes a first electrode and a second electrode, spaced apart from each other, and a light emitting element disposed between the first electrode and the second electrode. The light emitting element includes a core area and a doping area surrounding the core area.

An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top surface and the protrusions. Each of the protrusions has a bottom adjacent to the top surface, and a top opposite to the bottom. The buffer layer has a first portion disposed on the top surface, and second portions respectively disposed on the protrusions. Each of the second portions of the buffer layer has a thickness that gradually reduces from the bottom to the top along a respective one of the protrusions. An LED chip including the epitaxial substrate structure and manufacturing methods of the epitaxial substrate structure and the LED chip are also provided.

A manufacturing method fora micro light-emitting diode (LED) display panel includes: providing a base substrate carrying a plurality of LED dies, each LED die including a first semiconductor layer, a light-emitting material layer, a second semiconductor layer and a first conductive layer, the first semiconductor layer being bonded with the base substrate through a sacrificial layer, a material of the sacrificial layer being decomposable under laser irradiation; providing a backplane having a plurality of bonding structures; bonding at least some LED dies of the plurality of LED dies to at least some of the plurality of bonding structures through respective first conductive layers; and peeling each of the at least some LED dies from the base substrate through laser lift-off.

Exemplary devices such as ultraviolet light emitting diodes (UV LEDs) are disclosed which include conductive Be-doped p-type material with greatly improved efficiency over UV LEDs employing other dopants such as Mg. Exemplary processes for producing Be-doped p-type regions in semiconductor devices are also described.