A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface. The cone-shaped part has a first portion having a first angle of inclination of a side surface and a second portion having a second angle of inclination of a side surface smaller than the first angle. The second portion is closer to an apex of the cone-shaped part than the first portion and has a larger height than the first portion.

A semiconductor light emitting device includes a light extraction layer having a light extraction surface. Multiple cone-shaped parts formed in an array are provided on the light extraction surface of the semiconductor light emitting device. A proportion of an area occupied by the multiple cone-shaped parts per a unit area of the light extraction surface is not less than 65% and not more than 95% in a plan view of the light extraction surface, and an aspect ratio h/p defined as a proportion of a height h of the cone-shaped part relative to a distance p between apexes of adjacent cone-shaped parts is not less than 0.3 and not more than 1.0.

A light source device includes: a driving circuit; a blue light emitting element made of a group III nitride semiconductor which has a light outgoing surface on a side opposite to a side with the driving circuit, is arranged on the driving circuit, and is electrically connected to the driving circuit; and a color conversion layer which is in contact with the light outgoing surface and converts a wavelength of light emitted from the light outgoing surface. The light outgoing surface is made of a group III nitride semiconductor.

An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

A light emitting device including a substrate having a first surface and a second surface opposing the first surface, a light emitting structure disposed on the first surface of the substrate and defining a light emitting area, and a first light shielding layer disposed on the second surface of the substrate and exposing at least a portion of the light emitting area, in which the second surface of the substrate has a rough surface that overlaps at least a portion the light emitting area.

A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

A vertical topology light emitting device can include a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, in which the GaN-based semiconductor structure includes an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, in which the n-type GaN-based layer has an etched flat surface, and the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, in which the interface layer includes a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.

A method of manufacturing a light-emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; forming a plurality of modified regions inside the substrate of the wafer by irradiating the substrate with a laser beam; and separating the wafer into a plurality of light-emitting elements after said irradiating the substrate with the laser beam. Said forming the plurality of modified regions includes: scanning the laser beam along a plurality of first lines, the plurality of first lines extending in a first direction and being arranged in a second direction, the first direction being parallel to the first surface, the second direction intersecting the first direction and being parallel to the first surface, and scanning the laser beam along a plurality of second lines, the plurality of second lines extending in the second direction and being arranged in the first direction.

A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and Al.sub.xGa.sub.1-xN (0.1x1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.