A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first spacer region, a first reflective layer, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math./n. K is a constant ranging from 0.25 to 10, is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.

Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.

A semiconductor element includes a semiconductor layer, a carbide substrate, and a reflective layer. The carbide substrate is provided on the semiconductor layer. The reflective layer is provided on the carbide substrate such that the carbide substrate is sandwiched between the semiconductor layer and the reflective layer. The reflective layer includes silver and at least one of oxide particles and nitride particles.

Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

A method of manufacturing a light-emitting element includes: forming a plurality of rod-shaped layered structures by performing steps including: forming a first conductive-type semiconductor layer on a substrate, forming, on the first conductive-type semiconductor layer, an insulating film defining a plurality of openings and a plurality of rods of a first conductive-type semiconductor, wherein each of the rods is disposed through a respective one of the plurality of openings, forming a light-emitting layer covering outer surfaces of the plurality of rods, and forming a second conductive-type semiconductor layer covering outer surfaces of the light-emitting layer; forming a photoresist pattern covering a portion of the plurality of the rod-shaped layered structures; removing a portion of the insulating film in a region that is not covered by the photoresist pattern; and removing a portion of the plurality of rod-shaped layered structures in the region that is not covered by the photoresist pattern.

A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.

GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices. Surface charge properties play a dominant role on the device performance and have been addressed within the prior art by use of a relatively thick large bandgap AlGaN shell covering the surfaces of axial InGaN nanowire LED heterostructures has been explored and shown substantial promise in reducing surface recombination leading to improved carrier injection efficiency and output power. However, these lead to increased complexity in device design, growth and fabrication processes thereby reducing yield/performance and increasing costs for devices. Accordingly, there are taught self-organising InGaN/AlGaN core-shell quaternary nanowire heterostructures wherein the In-rich core and Al-rich shell spontaneously form during the growth process.