A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.

The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: formation (100) of a buffer layer (20) on a substrate (10), said buffer layer comprising an upper surface layer based on group III nitrides, and deposition (200) of a crystalline layer (30) on the buffer layer, said crystalline layer being deposited from silicon atoms so as to cover the entire surface of the upper layer based on group III nitrides. The invention also relates to a support obtained by the method, to a semiconductor structure based on the support, and to the method for the production thereof.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

An epitaxial substrate having a 2D material interposer, the epitaxial substrate extending along an epitaxial interface direction, wherein the epitaxial substrate includes: a polycrystalline base substrate having a superficial layer, a wafer bevel, and a back surface, wherein a difference in coefficient of thermal expansion between the polycrystalline base substrate and MN or GaN is not greater than 1.510.sup.6 C..sup.1 in a direction parallel to the epitaxial interface; a multi-orientation 2D ultra-thin material interposer arranged on the superficial layer of the polycrystalline base substrate, wherein the multi-orientation 2D ultra-thin material interposer has a top layer, a lattice constant of the top layer being highly matched with that of AlN, AlGaN, or GaN; and an AlN, AlGaN, or GaN-based epitaxial layer, which is epitaxially grown on a portion of the multi-orientation 2D ultra-thin material interposer distant from the polycrystalline base substrate.

A colour conversion resonator system, comprising: a first partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a second partially reflective region configured to at least partially transmit light of the first and second primary peak wavelengths and to reflect light of a third primary peak wavelength; a third partially reflective region configured to at least partially reflect light with the third primary peak wavelength; a first colour conversion resonator cavity arranged to receive input light with the first primary peak wavelength through the first partially reflective region and to convert at least some of the light of the first primary peak wavelength to provide light of the second primary peak wavelength, wherein the first colour conversion resonator cavity is arranged such that the second primary peak wavelength resonates in the first colour conversion resonator cavity and resonant light with the second primary peak wavelength is output through the second partially reflective region; and a second colour conversion resonator cavity arranged to receive input light comprising the second primary peak wavelength through the second partially reflective region and to convert at least some of the second primary peak wavelength to provide light of the third primary peak wavelength, wherein the second colour conversion resonator cavity is arranged such that the third primary peak wavelength resonates in the second colour conversion resonator cavity and resonant light with the third primary peak wavelength is output through the third partially reflective region, wherein the first colour conversion resonator cavity and the second resonator cavity are arranged partially to overlap to provide a non-overlapping portion and an overlapping portion thereby to define a first light emitting surface and a second light emitting surface respectively, wherein the first light emitting surface is arranged to provide resonant light of the second primary peak wavelength and the second light emitting surface is arranged to provide resonant light of the third primary peak wavelength.

A method for obtaining at least one nitride layer based upon a III-N material includes the successive steps of providing a stack having a support substrate and a plurality of pads, each pad including at least one basal section and one germination section carried by the basal section; modifying the basal section so as to form a modified basal section having a lower rigidity that the basal section before modification; and epitaxially growing a crystallite from the top of at least some of the pads of an assembly and continuing the epitaxial growth so as to form the nitride layer on pads on the assembly.

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10.sup.19 cm.sup.3.

A light emitting element includes an n-side nitride semiconductor layer; an active layer disposed on the n-side nitride semiconductor layer and including a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers, the active layer being configured to emit ultraviolet light; and a p-side nitride semiconductor layer disposed on the active layer. At least one of the plurality of barrier layers including, successively from the n-side nitride semiconductor layer side, a first barrier layer containing Al and Ga, and a second barrier layer disposed in contact with the first barrier layer, containing Al, Ga, and In, and having a smaller band gap energy than the first barrier layer. At least one of the plurality of well layers is disposed in contact with a second barrier layer and has a smaller band gap energy than the second barrier layer.

Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting element 100 of this disclosure comprises an n-type semiconductor layer 30, a light-emitting layer 40, and a p-type semiconductor layers 60, on a substrate 10, in this order. The light-emitting layer 40 emits deep ultraviolet light. The p-type semiconductor layers 60 comprise a p-type first layer 60A and a p-type contact layer 60B directly on the p-type first layer 60A. The p-type contact layer 60B is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layer 60B from the p-type first layer 60A is 10% or higher.

A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.