A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.

An UV light-emitting diode includes a patterned substrate, a template layer, a growth layer, a first n-type semiconductor layer, an intrinsic semiconductor layer, a second n-type semiconductor layer, a plurality of layers of multiple quantum wells, a barrier layer, a first electron blocking layer, a second electron blocking layer, a first p-type semiconductor layer and a second p-type semiconductor layer in sequence from a bottom layer to a top layer. Whereas the aforementioned layers all include Group III nitride materials and the number of layers for the plurality of layers of multiple quantum wells is at least five layers. Because the first n-type semiconductor layer, the first p-type semiconductor layer, and the plurality of layers of multiple quantum wells all contain aluminum, short-wavelength UV light is emitted when a current is applied.

An apparatus including a red LED and monolithic multicolor LED pixel and a method of fabricating an LED device is disclosed. The method includes providing a substrate for the wafer. The method also includes forming a light emitting diode (LED) using Hydrazine to dispose above the substrate an Indium Gallium Nitride (InGaN) layer of the LED.

Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the disclosure includes forming multiple crystals carried by a support member, with the crystals having an orientation selected to facilitate formation of gallium nitride. The method can further include forming a volume of gallium nitride carried by the crystals, with the selected orientation of the crystals at least partially controlling a crystal orientation of the gallium nitride, and without bonding the gallium nitride, as a unit, to the support member. In other embodiments, the number of crystals can be increased by a process that includes annealing a region in which the crystals are present, etching the region to remove crystals having an orientation other than the selected orientation, and/or growing the crystals having the selected orientation.

This disclosure provides an array substrate for a liquid crystal display panel, comprising: a base substrate; a light-emitting diode back light source deposited on one surface of the base substrate; and thin film transistor on the other surface of the base substrate. This disclosure also provides a production method of an array substrate, a liquid crystal display panel, and a display apparatus.

An III-nitride epitaxial structure and a method for manufacturing the same are disclosed. The III-nitride epitaxial structure includes a gallium nitride layer, an indium gallium nitride layer, and an indium nitride layer. The gallium nitride layer includes an M-plane gallium nitride surrounding a c-plane gallium nitride thereof. The indium gallium nitride layer is arranged on the gallium nitride layer. The indium gallium nitride layer includes an M-plane indium gallium nitride surrounding a c-plane indium gallium nitride thereof. The indium nitride layer is arranged on the indium gallium nitride layer. The indium nitride layer includes an M-plane indium nitride surrounding a c-plane indium nitride thereof. The c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion that is connected to a thin c-plane indium nitride disk which is spaced from the M-plane indium nitride by a gap.

The present invention discloses a vertical structure nonpolar LED chip on a lithium gallate substrate and a preparation method therefor. According to the method, LED epitaxial wafers are grown on a lithium gallate substrate, wherein the LED epitaxial wafers comprise a GaN buffer layer grown on the lithium gallate substrate, a non-doped GaN layer on the GaN buffer layer, an n-type doped GaN thin film on the non-doped GaN layer, an InGaN/GaN quantum well on the n-type doped GaN thin film and a p-type doped GaN thin film on the InGaN/GaN quantum well. Then, electrode patterns are prepared on the surfaces of the LED epitaxial wafers by the steps of spin coating, photoetching, developing and cleaning, and an electrode metal is sequentially deposited on the upper surfaces of the epitaxial wafers. Then, the LED epitaxial wafers are transferred to a copper substrate. Then, the original lithium gallate substrate is lifted off by an HCl solution, a silicon dioxide protective layer is prepared, and the corresponding part of an electrode is exposed. Then, SiO.sub.2 on the electrode is etched away, and a complete vertical structure LED chip is formed.

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 m. A flip chip display device is also disclosed.

A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.

A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.