A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.

A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.

A micro device structure comprising at least part of an edge of a micro device is covered with a metal-insulator-semiconductor (MIS) structure, wherein the MIS structure comprises a MIS dielectric layer and a MIS gate conductive layer, at least one gate pad provided to the MIS gate conductive layer, and at least one micro device contact extended upwardly on a top surface of the micro device.

A display panel includes a pixel array substrate, a plurality of vertical light emitting devices and a flip-chip light emitting device. The pixel array substrate has a first pixel area and a second pixel area. The vertical light emitting devices are disposed in the first pixel area and the second pixel area and electrically connected to the pixel array substrate. The flip-chip light emitting device is disposed in the second pixel area and electrically connected to the pixel array substrate. A color of an emitted light beam of the flip-chip light emitting device and a color of an emitted light beam of one of the vertical light emitting devices located in the first pixel area are identical.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (μm).

The present invention relates to a flexible skin patch equipped with an ultra-thin LED assembly that emits light in a specific wavelength range and an invention for manufacturing the same, and is related to an invention capable of providing a flexible skin patch that has the excellent effect of promoting vitamin D production in a localized area of the skin, and has the effect of alleviating or treating local skin psoriasis, fungi, fungal tumors and eczema, and has excellent antiviral effect, and is easy to attach and detach.

A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer has a first crystal structure that matches a second crystal structure of the first-conductivity-type compound semiconductor layer and the second-conductivity-type compound semiconductor layer.

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a nitrogen-containing nucleation layer deposited on the substrate. The methods may include forming a silicon-containing material on at least a first portion of the nitrogen-containing nucleation layer. The methods may include forming a second layer of material on at least a second portion of the nitrogen-containing nucleation layer. The methods may include forming a masking layer on a portion of the second layer of material. The masking layer may cover less than or about 90% of the second layer of material. The methods may include growing the second layer of material through the masking layer. The methods may include coalescing the second layer of material above the masking layer.

A display device and a method for manufacturing the same are provided. The display device includes a substrate, pixel electrodes on the substrate, and light emitting elements on the pixel electrodes, each of the light emitting elements including a first stack configured to emit first light, a second stack below the first stack, and configured to emit second light, a third stack below the second stack, and configured to emit third light, and tunnel function layers respectively between the first stack and the second stack, and between the second stack and the third stack.

A display device comprises a substrate, a pixel electrode on the substrate, a light emitting element on the pixel electrode, and a common electrode layer on the light emitting element, and configured to receive a common voltage, wherein the light emitting element configured to emit a first light according to a driving current having a first current density, is configured to emit a second light according to a driving current having a second current density, and is configured to emit a third light according to a driving current having a third current density.