Provided is a III nitride semiconductor light emitting device with improved reliability capable of maintaining light output power reliably as compared with conventional devices, and a method of producing the same. The III-nitride semiconductor light-emitting device comprising: a light emitting layer, a p-type electron blocking layer, a p-type contact layer, and a p-side electrode in this order. The p-type contact layer has a first p-type contact layer co-doped with Mg and Si in contact with the p-type electron blocking layer and a second p-type contact layer doped with Mg in contact with the p-side electrode.

Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

Disclosed is a Group III nitride semiconductor template for a 300-400 nm near-ultraviolet light emitting semiconductor device, the template including: a growth substrate; a nucleation layer based on Al.sub.xGa.sub.1-xN (0<x1, x>y); and a monocrystalline Group III nitride semiconductor layer based on Al.sub.yGa.sub.1-yN (y>0), and a near-ultraviolet light emitting semiconductor device using the template.

A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment, a light-emitting device includes at least one light-emitting semiconductor body with an active layer configured to generate light and a housing comprising a carrier and a cover plate which is transparent to the light. The carrier and the cover plate are connected to each other by a surrounding metal frame and, together with the metal frame, form a hermetically sealed interior space, wherein the at least one light-emitting semiconductor body is arranged inside the interior space, and wherein the cover plate is a growth substrate on which the at least one light-emitting semiconductor body is grown.

A method for producing light-emitting UV column structures using the epitaxy of the organometallic compounds of the gaseous phase on a PSS plate having a surface for epitaxy provided with protrusions with a regular shape, having a tip and a side surface, in particular protrusions with a conical shape. The present disclosure also includes structures produced using this method.

A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.

Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H.sub.2 and/or NH.sub.3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Provided is a method of producing a III nitride semiconductor light-emitting device having an n-type semiconductor layer, a light emitting layer, a barrier layer, and a p-type semiconductor layer. The p-type semiconductor layer is formed by forming an electron blocking layer on the light emitting layer; supplying a carrier gas containing nitrogen to a surface of the electron blocking layer; and forming a second p-type contact layer made of Al.sub.yGa.sub.1-yN on the electron blocking layer after the nitrogen carrier gas supply step. The second p-type contact formation step is performed using a carrier gas containing hydrogen. Source gases of Al and Ga are supplied to form a first p-type contact layer made of Al.sub.xGa.sub.1-xN with a thickness of more than 0 nm and 30 nm or less directly on the electron blocking layer and directly under the second p-type contact layer.