The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al.sub.1-xGa.sub.xN, where 0≤x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 10.sup.19 cm.sup.−3. A defect density of the strain release layer is less than or equal to 5×10.sup.9/cm.sup.2. A light-emitting diode is also provided.

A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ≥15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.

The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

The invention relates to a method for manufacturing a transmitter device (10) comprising the steps of: providing of a substrate (70) made of a semiconductor material having a first face (85) defining the substrate (70) in a direction (N) normal to the first face (85), implanting, through the first face (85), atoms capable of forming a weakened portion in the substrate, the substrate (70) further comprising a surface portion (92) and an internal portion (95), the weakened portion (90) separating the surface portion (92) from the internal portion (95) in the normal direction (N), forming, on the first face (85), a light-emitting diode (20), bonding a face (150) of the diode (20) to a second face (155) of a support (15), and breaking the weakened portion (90) in order to separate the surface portion (92) from the internal portion (95).

Gallium-containing semiconductor layers are grown on a substrate, followed by dry etching of the gallium-containing semiconductor layers during fabrication of a device. After the dry etching, surface treatments are performed to remove damage from the sidewalls of the device. After the surface treatments, dielectric materials are deposited on the sidewalls of the device to passivate the sidewalls of the device. These steps result in an improvement in forward current-voltage characteristics and reduction in leakage current of the device, as well as an enhancement of light output power and efficiency of the device.

Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon (111) plane of a silicon fin, forming a quantum well layer on the n-doped III-V layer, forming a p-doped III-V layer on the quantum well layer, and then forming an ohmic contact layer on the p-doped III-V layer.

A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al.sub.1Ga.sub.1N.sub.2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al.sub.1Ga.sub.2N.sub.3.

A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000 ° C., to a thickness of at least 0.5μ. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.

A light emitting diode includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a light emitting layer, and a stress relief layer. The second conductivity-type semiconductor layer has a conductivity type opposite to that of the first conductivity-type semiconductor layer. The light emitting layer is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The stress relief layer is disposed between the first conductivity-type semiconductor layer and the light emitting layer, and includes well layers and barrier layers stacked alternately. The stress relief layer further includes at least one blocking zone in at least one of the well layers. The at least one blocking zone has an energy gap greater than an energy gap of the at least one of the well layers. A method for manufacturing the light emitting diode is also disclosed.