A nitride semiconductor light-emitting element includes a substrate, a buffer layer formed on the substrate, an n-type semiconductor layer formed on the buffer layer, and an active layer being formed on the n-type semiconductor layer and comprising a single quantum well structure. A full width at half maximum of an X-ray rocking curve for a (102) plane of the buffer layer is not less than 369.4 arcsec and not more than 492.5 arcsec.

A light emitting device is provided. The light emitting device includes: a first semiconductor layer; a dislocation blocking layer on an upper surface of the first semiconductor layer and having a plurality of holes formed therein; a second semiconductor layer on the dislocation blocking layer; a third semiconductor layer on the second semiconductor layer; an active layer on the third semiconductor layer; and a fourth semiconductor layer on the active layer. A plurality of voids, which respectively overlap the plurality of holes along a vertical direction perpendicular to the upper surface of the first semiconductor layer, are provided between the first semiconductor layer and the second semiconductor layer.

A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

There is provided a nitride crystal substrate comprising group-III nitride crystal and containing n-type impurities, wherein an absorption coefficient α is approximately expressed by equation (1) in a wavelength range of at least 1 μm or more and 3.3 μm or less: α=n Kλ.sup.a (1) (wherein, λ(μm) is a wavelength, α(cm.sup.−1) is absorption coefficient of the nitride crystal substrate at 27° C., n (cm.sup.−3) is a free electron concentration in the nitride crystal substrate, and K and a are constants, satisfying 1.5×10.sup.−19≤K≤6.0×10.sup.−19, a=3).

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

Disclosed herein are techniques relating to wafer-to-wafer bonding for manufacturing light-emitting diodes (LEDs). In some embodiments, a method includes reducing bowing of a layered structure including a semiconductor material and a substrate on which the semiconductor material is formed by generating breakages, fractures, or at least one region of weakened bonding within the layered structure. The method also includes bonding a base wafer to the semiconductor material, removing the substrate from the semiconductor material, and forming a plurality of trenches through the semiconductor material to produce a plurality of LEDs.

A method for manufacturing an optoelectronic device having a substrate and, on a first face of the substrate, at least one stack, in a longitudinal direction, of at least one injection layer of a first type of carriers and an active layer. The method including formation of a growth mask on the first face of the substrate, the growth mask having an opening in the longitudinal direction through which the first face is exposed, formation, from the exposed zone of the substrate, of the injection layer of the first type of carriers within the opening, formation of the active layer on the injection layer, within the opening, such that the active layer is confined in the opening and does not extend outside of the opening. One or more embodiment also relates to an optoelectronic device having an active layer confined in an opening of a growth mask.

A method of manufacturing a light-emitting element, and a light-emitting element array substrate and a display device including the same are provided. A method of manufacturing a light-emitting element includes: forming a base substrate including a plurality of protrusions and a rod area which is a remaining area except for the plurality of protrusions; forming a buffer layer on the base substrate; forming a semiconductor structure including a first semiconductor material layer, a light-emitting material layer, and a second semiconductor material layer on the buffer layer; forming a plurality of mask patterns overlapping the rod area on the semiconductor structure; forming element rods by removing the semiconductor structure overlapping the plurality of protrusions using the plurality of mask patterns; forming an insulating film around an outer surface of each of the element rods. and separating the element rods from the buffer layer.

The invention relates to a method for producing an optical apparatus (200). The method comprises a step of providing a substrate (210) on whose first main surface (212) a plurality of emission devices (220) for emitting electromagnetic radiation (250, 255) are arranged. The substrate (210) is designed as a light-emitting diode wafer and/or formed from sapphire or gallium nitride and is transparent at least for one emission wavelength of the radiation (250, 255) emitted by the emission devices (220), The method also comprises a step of applying an absorption material (230) on the side of the first main surface (212) of the substrate (210). The absorption material (230) has a photostructurable resist that absorbs at least the emission wavelength. The method further comprises a step of processing the absorbing material (230) in order to lay bare at least one emission surface (227) of each emission device (220). In this case, a position determination of surfaces to be laid bare is carried out from a second main surface (214) of the substrate (210) opposite the first main surface (212). In addition, the method comprises a step of singulating the substrate (210) into a plurality of optical apparatuses (200) by means of a separating manufacturing process, wherein each optical apparatus (200) has at least one emission device (220).

A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.