A method and a device for cascading broadband emission is described. The device may comprise a substrate, a bottom contact layer above at least a portion of the substrate, and a plurality of emission regions above the bottom contact layer. The plurality of emission regions may be disposed one above another. Each of the plurality of emission regions may be configured with different respective bandgaps to emit radiation of different wavelengths. The device may comprise a plurality of tunnel junctions and a top contact layer above the plurality of emission regions. The plurality of emission regions may comprise a W-superlattice comprising an electron-well layer, a hole-well layer and an electron confinement layer. Semiconductor layers of the W-superlattice may include AlAsSb, InAs, InGaSb, and InAs. Exemplary embodiments of the W-superlattice may comprise a W-quantum well.

A nitride semiconductor element includes: a first light emission part that includes a first n-side semiconductor layer, a first active layer, and a first p-side semiconductor layer; a first layer that contains an n-type impurity of a first concentration, located on the first light emission part, and in contact with the first p-side semiconductor layer; a second layer that contains an n-type impurity of a second concentration, located on the first layer; and a second light emission part that includes a second n-side semiconductor layer located on the second layer, a second active layer, and a second p-side semiconductor layer. The second n-side semiconductor layer contains an n-type impurity of a third concentration. The first and second concentrations are higher than the third concentration. The first concentration is higher than the second concentration. A thickness of the second layer is larger than a thickness of the first layer.

Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.

Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.

A manufacturing method of an embodiment includes: providing a semiconductor growth substrate including a semiconductor layer including a light-emitting layer on a first substrate; forming a first insulating film on a second substrate that includes a circuit that includes a circuit element and a first wiring layer; forming a plug in the first insulating film to be connected with the circuit element; bonding the semiconductor layer to the second substrate and electrically connecting the plug to the semiconductor layer; forming a light-emitting element electrically connected to the plug by patterning the semiconductor layer; forming a second insulating film that covers the light-emitting element and the first insulating film; exposing a portion of the light-emitting element by removing a portion of the second insulating film; and forming a second wiring layer on the second insulating film.

A method for manufacturing an image display device includes: providing a semiconductor growth substrate comprising a semiconductor layer on a first substrate, the semiconductor layer comprising a light-emitting layer; providing a second substrate comprising a circuit, wherein the circuit comprises a circuit element; forming a light-shielding layer on the second substrate; forming an insulating film on the light-shielding layer; bonding the semiconductor layer to the second substrate on which the insulating film is formed; forming a light-emitting element by etching the semiconductor layer; forming an insulating layer that covers the light-emitting element; and electrically connecting the light-emitting element to the circuit element. The light-shielding layer is located between the light-emitting element and the circuit element. In a plan view, the light-shielding layer covers the circuit element.

An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disposed at an outer side based on an outer side surface of the first electrode, and a ratio of an area of the first etched region and an area of the intermediate layer is 1:0.3 to 1:0.7, and a light emitting element package including the same.

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Provided is a micro light emitting device and a display apparatus having the micro light emitting device. The micro light emitting device includes a first-type semiconductor layer provided on a substrate, a superlattice layer provided on the first-type semiconductor layer, a current blocking layer provided on a side portion of the superlattice layer, an active layer provided on the superlattice layer and the current blocking layer, and a second-type semiconductor layer provided on the active layer.

A light emitting device including a substrate having a first surface and a second surface opposing the first surface, a light emitting structure disposed on the first surface of the substrate and defining a light emitting area, and a first light shielding layer disposed on the second surface of the substrate and exposing at least a portion of the light emitting area, in which the second surface of the substrate has a rough surface that overlaps at least a portion the light emitting area.