A light article includes: a substrate; a truncated cuboidal fin disposed on the substrate and including: a laterally-grown nanocrystal including a longitudinal length and a lateral length that are different; a charge injection facet arranged along a longitudinal fin axis of the truncated cuboidal fin; and a truncation facet disposed opposing the charge injection facet and arranged parallel to the longitudinal fin axis; a side-injector disposed on the charge injection facet of the truncated cuboidal fin and that provides electrons to an active layer; and the active layer interposed between the side-injector and the substrate and that: receives electrons from the side-injector; receives holes from the substrate; and produces light in response to combining the electrons and the holes.

A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

A nanorod light-emitting device is provided. The nanorod light-emitting device includes a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer, at least one current blocking layer that surrounds a side surface of the at least one conductive layer, and an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer.

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

A method of fabricating a micro light emitting diode (micro LED) apparatus includes forming a first substrate including a first silicon layer, a second silicon layer, and a silicon oxide layer sandwiched between the first silicon layer and the second silicon layer; forming a plurality of micro LEDs on a side of the second silicon layer distal to the silicon oxide layer; bonding the first substrate having the plurality of micro LEDs with a second substrate; and removing the silicon oxide layer and the first silicon layer.

A vertical blue LED includes: a conductive substrate, the conductive substrate including a first surface and a second surface opposite to the first surface a nitride epitaxial layer; a metal reflective layer, positioned on the first surface; a nitride epitaxial layer, positioned on a surface of the metal reflective layer and including a P-type GaN layer, a quantum well layer, a preparation layer, and an N-type GaN layer that are sequentially stacked along a direction perpendicular to the conductive substrate, wherein a thickness of the nitride epitaxial layer is less than a wavelength of blue light; an N-type electrode, positioned on a surface of the N-type GaN layer; and a P-type electrode, positioned on the second surface.

The present invention provides a micro-LED chip, a manufacturing method of the micro-LED chip, and a display panel. The micro-LED chip includes a plurality of sub-chips connected in series. The first sub-chip and the last sub-chip are connected to a first electrode and a second electrode, respectively. Accordingly, a voltage across the micro-LED chip is increased, power consumption of a driving thin film transistor (TFT) is reduced, and a high power consumption problem of driving TFTs in conventional micro-LED displays is improved.

Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.