Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

A method is provided for obtaining a semi-polar nitride layer obtained from a gallium and nitrogen based material on an upper surface of a crystalline substrate of cubic symmetry, including: etching parallel grooves from the upper surface having two opposed inclined facets, one having a crystalline orientation <111>; forming a mask above the upper surface such that the facets having <111> orientation are not masked; and then forming the layer by epitaxial growth from the non-masked facets, including: a first epitaxial growth phase to form a seed in parallel grooves; interrupting the first phase when the seed has an inclined facet having a crystalline orientation 0001 and an upper facet having a crystalline semi-polar orientation 1011; a surface treatment step including modifying an upper portion of the seed to include silicon; and a second epitaxial growth phase from the inclined facet, continuing until coalescence of seeds of adjacent parallel grooves.

A growth layer having a growth surface with protruding domains is described. The protruding domains can be separated by a substantially flat growth surface located between the protruding domains. A protruding domain can include an internal region that can be filled with a gas and/or can be partially or completely filled with one or more materials that differ from the material of the growth layer, which forms an outer surface of each of the protruding domains.

The present disclosure provides a manufacturing method of semiconductor structure, including: providing a structure to be peeled off, where the structure to be peeled off includes a first structure and a second structure, the first structure includes: a base; a first mask layer located on the base, where a first opening that exposes the base is provided in the first mask layer, and a first epitaxial layer epitaxially grown from the base to fill up the first opening; and the second structure includes: a second epitaxial layer located on the first epitaxial layer and the first mask layer; and applying force on the structure to be peeled off to fracture the second epitaxial layer and the first epitaxial layer, to peel off the first structure and make the second structure form a semiconductor structure.

A light-emitting device according to one embodiment of the present disclosure includes: a base having a first surface and a second surface that face each other; a structure having a first conductivity type and erected in a direction perpendicular to the first surface of the base; a semiconductor layer having a second conductivity type different from the first conductivity type, and provided on a side surface of the structure; and an active layer provided between the structure and the semiconductor layer, and having substantially same end surface as the structure and the semiconductor layer above the first surface of the base.

A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al.sub.1-xGa.sub.xN, where 0x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 10.sup.19 cm.sup.3. A defect density of the strain release layer is less than or equal to 510.sup.9/cm.sup.2. A light-emitting diode is also provided.

Vertical solid-state transducers (SSTs) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

To provide a high-quality group III nitride semiconductor. A group III nitride semiconductor including an n-GaN layer composed of Al.sub.xGa.sub.1-xN (0x<1), an InGaN layer disposed on the n-GaN layer and composed of InGaN, an n-AlGaN layer disposed on the InGaN layer and composed of n-type Al.sub.yGa.sub.1-yN (0y<1), and a functional layer disposed on the n-AlGaN layer, wherein the concentration of Mg in the n-GaN layer is higher than the concentration of Mg in the n-AlGaN layer.

A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.