An approach to forming a full color micro-display that includes using a plurality of micro-light emitting diodes formed in a silicon on insulator substrate, where the plurality of micro-light emitting diodes include a plurality of red micro-light emitting diodes, a plurality of green micro-light emitting diodes, and a plurality of blue micro-light emitting diodes. Additionally, the approach includes forming a plurality of transistor devices in the silicon on insulator substrate, wherein each transistor device of the plurality of transistor devices acts as a switch connecting to a micro-light emitting diode of the plurality of micro-light emitting diodes.

The invention relates to a method of manufacturing an optoelectronic device (1) produced on the basis of GaN, comprising an emission structure (10) configured to emit a first light radiation at the first wavelength (.sub.1), the method comprising the following steps: i. producing a growth structure (20) comprising a nucleation layer (23) of In.sub.x2Ga.sub.1-x2N at least partially relaxed; ii. producing a conversion structure (30), comprising an emission layer (33) configured to emit light at a second wavelength (.sub.2), and an absorption layer (34) produced on the basis of InGaN; iii. transfer of the conversion structure (30) onto the emission structure (10) in such a way that the absorption layer (34) is located between the emission structure (10) and the emission layer (33) of the conversion structure.

A method of manufacturing a semiconductor element includes: a first providing step comprising providing a structure body comprising a semiconductor stacked body, the structure body including first surfaces that include surfaces defining at least one first recess; a first forming step comprising forming a first rough-surface portion at or inward of at least a portion of the surfaces defining the first recess of the structure body; a second forming step comprising forming a first metal layer at a first surface side of the structure body; a second providing step comprising providing a substrate on which a second metal layer is disposed; and a bonding step comprising heating the first metal layer and the second metal layer in a state in which the first metal layer and the second metal layer face each other.

Integrated active-matrix light emitting pixel arrays based displays are provided. An example integrated device includes a backplane including pixel circuits conductively coupled to an array of light-emitting elements through intermediate conductive layers to form an array of active-matrix light-emitting pixels and a transparent conductive layer on the array of the light-emitting elements. Each of the light-emitting elements includes one or more quantum well semiconductor layers between a first contact electrode and a second contact electrode, and the first contact electrodes of the light-emitting elements is respectively bonded and conductively coupled to the pixel circuits in the backplane via the respective intermediate conductive layers. The transparent conductive layer is in contact with the second contact electrodes of the light-emitting elements to form a common electrode of the light-emitting elements, and a top surface of each of the second contact electrodes is fully in contact with the transparent conductive layer.

A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

An ultraviolet light-emitting diode chip, including: a n-type semiconductor layer; an intermediate layer disposed on the n-type semiconductor layer, the intermediate layer including a plurality of first tapered pits; an active layer disposed on the intermediate layer; a p-type semiconductor layer disposed on the active layer; a n-type electrode disposed on the n-type semiconductor layer; a p-type electrode disposed on the p-type semiconductor layer; a reflecting layer; a bonding layer; and a substrate. The reflecting layer and the bonding layer are disposed between the p-type electrode and the substrate. The active layer includes a plurality of second tapered pits in a hexagonal structure and a plurality of first flat regions connecting every two adjacent second tapered pits. The projected area of the plurality of first flat regions is less than 30% of the projected area of the active layer.

A method of depositing a coating layer comprising gallium nitride on a substrate comprising the steps of: (a) providing the substrate having a plurality of side walls and valleys; (b) forming a first layer of gallium nitride deposited on the substrate, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 400 to 500 C., such that the first layer is formed on the side walls and the valleys; and (c) forming a second layer of gallium nitride deposited on top of the first layer, by reacting gaseous trimethylgallium and ammonia at a temperature ranging from 1000 to 1200 C., to obtain the coating layer comprising the first layer of gallium nitride and the second layer of gallium nitride at a thickness ranging from 3.0 to 4.5 m.

The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.