Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of a substrate deposition plane of the substrate. A material source that supplies a material to the substrate has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane. The exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate. The system can be configured for either i) minimum values for the orthogonal distance and the lateral distance to achieve a desired layer deposition uniformity using a set tilt angle, or ii) the tilt angle to achieve the desired layer deposition uniformity using a set orthogonal distance and a set lateral distance.

The present invention provides composition comprising a metal oxide semiconductor nanomaterial coated or dispersed with a hemostatic polymer.

Compositions, thin films, devices, and methods involving doped oxide semiconductor materials are described. Indium gallium doped zinc oxide (IGZO) with advantageous properties that may be useful as a transparent conductive oxide (TCO) is described. Methods of digital doping to create doped oxide semiconductor materials are described.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of a substrate deposition plane of the substrate. A material source that supplies a material to the substrate has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane. The exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate. The system can be configured for either i) minimum values for the orthogonal distance and the lateral distance to achieve a desired layer deposition uniformity using a set tilt angle, or ii) the tilt angle to achieve the desired layer deposition uniformity using a set orthogonal distance and a set lateral distance.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of a substrate deposition plane of the substrate. A material source that supplies a material to the substrate has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane. The exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate. The system can be configured for either i) minimum values for the orthogonal distance and the lateral distance to achieve a desired layer deposition uniformity using a set tilt angle, or ii) the tilt angle to achieve the desired layer deposition uniformity using a set orthogonal distance and a set lateral distance.

Systems and methods for forming semiconductor layers, including oxide-based layers, are disclosed in which a material deposition system has a rotation mechanism that rotates a substrate around a center axis of a substrate deposition plane of the substrate. A material source that supplies a material to the substrate has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane. The exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate. The system can be configured for either i) minimum values for the orthogonal distance and the lateral distance to achieve a desired layer deposition uniformity using a set tilt angle, or ii) the tilt angle to achieve the desired layer deposition uniformity using a set orthogonal distance and a set lateral distance.

The present invention provides composition comprising a metal oxide semiconductor nanomaterial coated or dispersed with a hemostatic polymer.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

A method for fabricating quantum rods includes: preparing a Cd-precursor; preparing a S-precursor and CdSe seeds; preparing a Zn-precursor; mixing the S-precursor and the CdSe seeds with the Cd-precursor in a reaction mixture; adding the Zn-precursor to the reaction mixture; stopping the reaction; and performing a purification process to obtain the quantum rods.

A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.