In embodiments, methods of configuring a molecular beam epitaxy system include providing a rotation mechanism configured to rotate a substrate deposition plane of a substrate around a center axis of the substrate deposition plane. A positioning mechanism is provided, being configured to allow the substrate deposition plane and an exit aperture of at least one material source in a plurality of material sources to be adjusted in position relative to each other between production runs. The at least one material source has a predetermined material ejection spatial distribution with a symmetry axis that intersects the substrate at a point offset from the center axis. A size of a reaction chamber, that houses the rotation mechanism and the plurality of material sources, is scaled based on the orthogonal distance and the lateral distance in relationship to a radius of the substrate.

Various embodiments may provide a light emission device including a stacked arrangement having a first pad region, a second pad region and a bridge region. At least a portion of the first pad region may include a portion of a first doped layer, while at least a portion of the second pad region may include a further portion of the first doped layer, a portion of a second doped layer, and a portion of an intrinsic layer. A percentage concentration of tin (Sn) of the intrinsic layer may be higher than that of the first doped layer, and that of the second doped layer. The light emission device may include a first tensile stressed metal pad in contact with the portion of the first doped layer, and a second tensile stressed metal pad in contact with the portion of the second doped layer.

Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.

A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10.sup.2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.