A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure on the active region; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer on the electron blocking structure; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is different from the first indium content.

A semiconductor device includes: a first semiconductor layer; a second semiconductor layer including a first dopant of a first conductivity type and a second dopant of a second conductivity type, wherein the first dopant has a doping concentration, and the first conductivity type is different from the second conductivity type; a third semiconductor layer on the second semiconductor layer, wherein the third semiconductor layer includes a third dopant including a doping concentration higher than the doping concentration of the first dopant; and an active region between the first semiconductor layer and the second semiconductor layer; wherein the second semiconductor layer includes a bottom surface facing the active region, and the active region includes a top surface facing the second semiconductor layer, and a distance between the bottom surface of the second semiconductor layer and the top surface of the active region is not less than 2 nm.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less than 0.3/um.sup.2. The higher the ratio of total roughened surface area of an epitaxial wafer to vertically projected area and the higher the number of peak over the critical height within a unit area, the more beneficial to improve light extraction efficiency of the epitaxial wafer. As a result, light extraction efficiency of the epitaxial wafer is greatly improved.

Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer doped with a first dopant type (e.g. n-type) and step surface. A mesa pillar including an active layer protrudes from the step surface, and a regrown second cladding layer doped with a second dopant type (e.g. p-type) is in direct contact with and spans a bottom surface and sidewalls of the mesa pillar and the step surface.

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.