The invention relates to a radiation-emitting semiconductor body, having a first semiconductor region of a first doping type, which has a first material composition, a second semiconductor region of a second doping type, which has a second material composition, an active region, which is located between the first semiconductor region and the second semiconductor region, and a first intermediate region, which is located between the first semiconductor region and the active region, wherein the active region includes a plurality of quantum well layers and a plurality of barrier layers, which are arranged alternatingly one above the other, the barrier layers have a third material composition, the first intermediate region includes at least one first blocking layer and at least one first intermediate layer, and the first blocking layer has a fourth material composition and the first intermediate layer has a fifth material composition. The invention also relates to a laser diode and to a light-emitting diode.

A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

Disclosed is a small-size vertical-type light emitting diode chip with high luminous in a central region. A PN junction structure is arranged on a light emitting region base of an interface structure, the interface structure is provided with a P-type Ohmic contact area at the light emitting region base, a central area of the PN junction structure is above the P-type Ohmic contact area, an insulating layer is formed on an extending platform adjacent to the light emitting region base and extends to cover an N-type semiconductor of the PN junction structure to form a border covering region surrounding the N-type semiconductor, an N-type Ohmic contact electrode covers the border covering region, and an N-type electrode pad is arranged on the insulating layer and electrically connected with the N-type Ohmic contact electrode via a bridging connected metal layer.

A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

A semiconductor device includes: a p type first semiconductor layer that contains acceptors as impurities; an n type second semiconductor layer that is provided on the first semiconductor layer and contains donors as impurities; and a p type first diffusion portion that includes a contact portion in contact with the first semiconductor layer, the contact portion containing acceptors whose concentration is higher than that in the first semiconductor layer.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.