A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.

A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

A light emitting device includes: a plurality of light emitting stacked layers, including a first surface and a second surface, wherein the second surface is electrically opposite to the first surface; a mesa structure; a current blocking layer disposed on the first surface, including a sidewall; and a transparent conductive layer disposed on the first surface; and a first pad electrode, disposed on the transparent conductive layer and on the first surface; wherein a retract distance of the transparent conductive layer with respect to an edge of the mesa structure is less than 3 μm; and wherein a retract distance of the transparent conductive layer with respect to an edge of the sidewall of the current blocking layer is less than 3 μm.

A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

Disclosed is a flip-chip LED, comprising: an epitaxial layer on a surface of a substrate, and comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in sequence from bottom to top, wherein a mesa in the epitaxial layer has an upper surface provided by the second semiconductor layer, a lower surface provided by the first semiconductor layer, and a side surface connecting the upper surface and the lower surface; a first insulating layer covering the side surface of the mesa, part of the upper surface and part of the lower surface; and a reflective layer on the second semiconductor layer. A manufacturing method of a flip-chip LED is also provided, an insulating layer covers the side surface of the mesa to protect the mesa immediately after the mesa is formed, to avoid abnormal phenomena and improve yield of the flip-chip LED.

Disclosed is a flip-chip LED, comprising: an epitaxial layer on a surface of a substrate, and comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in sequence from bottom to top, wherein a mesa in the epitaxial layer has an upper surface provided by the second semiconductor layer, a lower surface provided by the first semiconductor layer, and a side surface connecting the upper surface and the lower surface; a first insulating layer covering the side surface of the mesa, part of the upper surface and part of the lower surface; and a reflective layer on the second semiconductor layer. A manufacturing method of a flip-chip LED is also provided, an insulating layer covers the side surface of the mesa to protect the mesa immediately after the mesa is formed, to avoid abnormal phenomena and improve yield of the flip-chip LED.

Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.

A display device includes a substrate including a display area in which pixels are located, and a non-display area, first and second electrodes in the display area and spaced from each other, light emitting elements between the first and second electrodes, connection electrodes electrically connected to the light emitting elements, a fan-out line electrically connected to the pixels in the non-display area, a first pad electrode on the fan-out line, a pad connection electrode on the fan-out line and the first pad electrode, and electrically connecting the fan-out line and the first pad electrode, and a second pad electrode at a same layer as at least one of the connection electrodes, and contacting the first pad electrode.