Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

A semiconductor stack includes a substrate composed of a III-V group compound semiconductor, a buffer layer that is arranged on the substrate and that is composed of a III-V group compound semiconductor, and an active layer that is arranged on the buffer layer and that includes a layer composed of a III-V group compound semiconductor containing Sb as a group V element. A region of the buffer layer including a main surface of the buffer layer adjacent to the substrate includes a high-concentration region having a high total concentration of Si and C compared with another adjacent region.

A semiconductor stack includes a substrate composed of a III-V group compound semiconductor, a buffer layer that is arranged on the substrate and that is composed of a III-V group compound semiconductor, and an active layer that is arranged on the buffer layer and that includes a layer composed of a III-V group compound semiconductor containing Sb as a group V element. A region of the buffer layer including a main surface of the buffer layer adjacent to the substrate includes a high-concentration region having a high total concentration of Si and C compared with another adjacent region.