H01L33/502

Curable composition, film, laminated body, and display apparatus

An object of the present invention is to provide a curable composition comprising a fluorescent particle containing a perovskite compound, wherein a decrease in the quantum yield of a film formed by curing the curable composition due to heat can be suppressed; a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film. Provided are a curable composition comprising a fluorescent particle (A) containing a perovskite compound, a photopolymerizable compound (B), a photopolymerization initiator (C), and an antioxidant (D); a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film.

LIGHT EMITTING DEVICE
20180013039 · 2018-01-11 · ·

A light emitting device includes a light emitting element, a frame, a first light-transmissive member, and a second light-transmissive member. The light emitting element includes an element upper surface from which a light is configured to be emitted, an element bottom surface opposite to the element upper surface, and an element lateral surface connecting the element upper surface and the element bottom surface. The frame is provided to surround the light emitting element to be opposite to the element lateral surface. The first light-transmissive member is provided on the element upper surface and the element lateral surface to contact the frame. The first light-transmissive member covers the element upper surface and the element lateral surface. The second light-transmissive member is provided on the first light-transmissive member.

LIGHT-EMITTING DIODE (LED), LED PACKAGE AND APPARATUS INCLUDING THE SAME

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

Light-emitting diode adopting a multi-color light emitting chip and backlight-type display device including the light-emitting diode

A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

SOLID STATE LIGHT FIXTURES SUITABLE FOR HIGH TEMPERATURE OPERATION HAVING SEPARATE BLUE-SHIFTED-YELLOW/GREEN AND BLUE-SHIFTED-RED EMITTERS

Solid state light fixtures include a plurality of blue-shifted-yellow/green light emitting diode (“LED”) packages and a plurality of blue-shifted-red LED packages, where the solid state light fixture emits light having a correlated color temperature of between 1800 K and 5500 K, a CRI value of between 80 and 99, a CRI R9 value of between 15 and 75, and a Qg value of between 90 and 110 when the blue-shifted-yellow/green LED packages and the blue-shifted-red LED packages are operating at steady-state operating temperatures of at least 80° C.

Light emitting device
11710808 · 2023-07-25 · ·

A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, a red light emitting portion configured to emit red light, in which the blue light emitting portion include a first near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the first near-UV light emitting diode chip, blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of intensity of the second peak wavelength.

Display device

A display device including a light source member including a plurality of light emitting units emitting a first color light, an optical member disposed on an upper side of the light source member, and a liquid crystal display panel disposed on an upper side of the optical member. The optical member includes a base substrate, a color conversion layer disposed on the base substrate and including a quantum dot for converting the first color light into a second color light and a third color light, a filter layer disposed between the base substrate and the color conversion layer and transmitting the first color light and reflecting the second color light and the third color light, and an optical path changing layer disposed on at least one of an upper surface and a lower surface of the filter layer.

SYNTHESIS OF BLUE-EMITTING ZnSe1-xTex ALLOY NANOCRYSTALS WITH LOW FULL WIDTH AT HALF-MAXIMUM
20230235224 · 2023-07-27 · ·

The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.

LIGHT-EMITTING DEVICE AND LIGHT-EMITTING SYSTEM

A light-emitting device includes an optical amplifier and gives off output light from optical amplifier by making a plurality of seed light rays, having mutually different wavelengths, incident on optical amplifier. Optical amplifier includes a medium portion containing a wavelength-converting element. Optical amplifier has wavelength-converting element thereof excited by excitation light to produce a plurality of partially coherent light rays, of which wavelengths are respectively the same as the mutually different wavelengths of plurality of seed light rays, thereby giving off, as output light, a multi-wavelength light beam. Excitation light has a shorter wavelength than any of plurality of seed light rays and is incident on the medium portion. Multi-wavelength light beam includes a plurality of light rays amplified. Plurality of light rays amplified have wavelengths, which are respectively the same as mutually different wavelengths of plurality of seed light rays.

LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS USING SAME
20230238768 · 2023-07-27 ·

Provided is a light emitting device including a light source that emits primary light; and a wavelength converter that includes a first phosphor that absorbs the primary light and emits first wavelength-converted light, wherein the light emitting device emits output light including the first wavelength-converted light, the first wavelength-converted light is near-infrared light having a fluorescence intensity maximum value within a wavelength range of 700 nm or more and less than 800 nm, the first wavelength-converted light mainly contains a broad fluorescent component based on an electron energy transition of .sup.4T.sub.2.fwdarw..sup.4A.sub.2 of Cr.sup.3+, and the broad fluorescent component has a fluorescence spectrum half-width that is less than 100 nm.