The present application discloses a semiconductor device with a graded porous dielectric structure. The semiconductor device includes a substrate; two conductive features positioned apart from each other over the substrate, a graded porous dielectric structure positioned between the two conductive features; and a dielectric layer positioned between one of the two conductive features and the graded porous dielectric structure; wherein the graded porous dielectric structure comprises a first portion having a first porosity and a second portion having a second porosity, and the second porosity is higher than the first porosity.

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate; forming an insulating layer above the substrate; forming a first opening in the insulating layer; conformally forming a first framework layer in the first opening; forming an energy-removable layer on the first framework layer and filling the first opening; forming a second opening along the energy-removable layer and the first framework layer; conformally forming a second framework layer in the second opening; forming a top contact on the second framework layer and filling the second opening and forming a top conductive layer on the top contact; and performing an energy treatment to transform the energy-removable layer into porous insulating layers on two sides of the top contact.

A method for forming a semiconductor structure includes the steps of providing a substrate having a first region and a second region, forming a plurality of semiconductor devices on the first region of the substrate, forming a planarization layer on the substrate and covering the semiconductor devices, wherein the planarization layer on the first region and the planarization layer on the second region have a step-height, performing a first CMP process to remove the step height of the planarization layer, and after the first CMP process, performing a curing process to convert the planarization layer into a porous low-k dielectric layer.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes.

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

The present application discloses a semiconductor device with air gaps for reducing capacitive coupling between conductive features. The semiconductor device includes a first semiconductor structure including a substrate, a first conductive line positioned above the substrate and including two sides, a first protruding portion positioned on one of the two sides of the first conductive line, a second conductive line positioned adjacent to the first conductive line and including two sides, a second protruding portion positioned on one of the two sides of the second conductive line and face onto the first protruding portion, and an air gap positioned between the first protruding portion and the second protruding portion. A distance between the first protruding portion and the second protruding portion is less than a distance between the first conductive line and the second conductive line.

An integrated circuit die, a semiconductor structure, and a method of fabricating the semiconductor structure are disclosed. The integrated circuit die includes a substrate and a first anchor and a second anchor disposed on the substrate in a first plane. The integrated circuit die also includes a first wire disposed on the first anchor in the first plane, a third wire disposed on the second anchor in the first plane, and a second wire and a fourth wire suspended above the substrate in the first plane. The second wire is disposed between the first wire and the third wire and the third wire is disposed between the second wire and the fourth wire. The integrated circuit die further includes a dielectric material disposed between upper portions of the first wire, the second wire, the third wire, and the fourth wire to encapsulate an air gap.

A semiconductor device and method of manufacture comprise forming a channel-less, porous low K material. The material may be formed using a silicon backbone precursor and a hydrocarbon precursor to form a matrix material. The material may then be cured to remove a porogen and help to collapse channels within the material. As such, the material may be formed with a scaling factor of less than or equal to about 1.8.

A dielectric layer is formed over a substrate, an anti-reflective layer is formed over the dielectric layer, and a first hardmask is formed over the anti-reflective layer. A via opening and a trench opening are formed within the dielectric layer using the anti-reflective layer and the first hardmask as masking materials. After the formation of the trench opening and the via opening, the first hardmask is removed. An interconnect is formed within the openings, and the interconnect has a via with a profile angle of between about 70° and about 80° and a depth ratio of between about 65% and about 70%.

The present application discloses a semiconductor device with a graded porous dielectric structure. The semiconductor device includes a substrate; two conductive features positioned apart from each other over the substrate; a graded porous dielectric structure positioned between the two conductive features; and a dielectric layer positioned between one of the two conductive features and the graded porous dielectric structure; wherein the graded porous dielectric structure comprises a first portion having a first porosity and a second portion having a second porosity, and the second porosity is higher than the first porosity.