A method of forming a semiconductor structure is disclosed, comprising providing a substrate, forming at least a gate trench extending along a first direction in the substrate, forming a gate dielectric layer conformally covering the gate trench, forming a sacrificial layer on the gate dielectric layer and completely filling the gate trench, forming a plurality of openings through the sacrificial layer in the gate trench thereby exposing a portion of the gate dielectric layer, forming a dielectric material in the openings, performing an etching back process to remove a portion of the dielectric material until the dielectric material only remains at a lower portion of each of the openings thereby obtaining a plurality of intervening structures, removing the sacrificial layer, and forming a gate metal filling the gate trench, wherein the intervening structures are disposed between the gate metal and the gate dielectric layer.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and at least a gate trench extending along a first direction formed in the substrate. A gate dielectric layer is formed conformally covering the gate trench. A gate metal is formed on the gate dielectric layer and filling the gate trench. A plurality of intervening structures are arranged along the first direction in a lower portion of the gate trench and disposed between the gate metal and the gate dielectric layer.

An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

A method of forming a semiconductor device includes forming a dielectric spacer along sidewalls of a plurality of interconnect openings extending through a sacrificial dielectric layer and a first dielectric layer until a top portion of a first conductive material, the dielectric spacer includes a dielectric material having a dielectric constant higher than a dielectric constant of the sacrificial dielectric layer and higher than a dielectric constant of the first dielectric layer, conformally depositing a barrier liner within the plurality of interconnect openings above and in direct contact with the dielectric spacer, filling the interconnect openings with a second conductive material, removing the sacrificial dielectric layer to expose portions of the dielectric spacer above the first dielectric layer, and reducing a thickness of exposed portions of the dielectric spacer.

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and at least a gate trench extending along a first direction formed in the substrate. A gate dielectric layer is formed conformally covering the gate trench. A gate metal is formed on the gate dielectric layer and filling the gate trench. A plurality of intervening structures are arranged along the first direction in a lower portion of the gate trench and disposed between the gate metal and the gate dielectric layer.

Some implementations described herein provide an electronic device. The electronic device includes a first conductive structure that extends through a dielectric structure of the electronic device and into a substrate of the electronic device. The electronic device includes a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure. The electronic device includes a second conductive structure that extends along a second vertical portion of the first conductive structure, where the second conductive structure includes a conductive structure side surface, which is nearest to a side surface of the first conductive structure, that is a distance from the side surface of the first conductive structure, and where the distance is greater than or equal to approximately 5% of a width of the first conductive structure.

Some implementations described herein provide an electronic device. The electronic device includes a first conductive structure that extends through a dielectric structure of the electronic device and into a substrate of the electronic device. The electronic device includes a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure. The electronic device includes a second conductive structure that extends along a second vertical portion of the first conductive structure, where the second conductive structure includes a conductive structure side surface, which is nearest to a side surface of the first conductive structure, that is a distance from the side surface of the first conductive structure, and where the distance is greater than or equal to approximately 5% of a width of the first conductive structure.

The present disclosure relates to semiconductor device fabricating methods. An example semiconductor device fabricating method comprises forming a substrate including a chip area and an outside chip area and having a first surface and a second surface opposite to the first surface, forming a first trench, having a first width on the first surface, in the outside chip area of the substrate, forming a second trench, having a second width smaller than the first width, within the first trench, forming a first overlay key filling the first trench and the second trench, forming an active pattern on the first surface of the substrate, forming a source/drain pattern and a gate electrode on the active pattern in the chip area, and forming a backside contact on the second surface using a bottom surface of the first overlay key in the second trench.

A method for fabricating a semiconductor device includes the steps of first defining a scribe line on a front side of a wafer, in which the wafer includes an inter-metal dielectric (IMD) layer disposed on a substrate and an alternating stack disposed on the IMD layer. Next, part of the alternating stack is removed to form a trench on the front side of the wafer, a dielectric layer is formed in the trench, and then a dicing process is performed along the scribe line from a back side of the wafer to divide the wafer into chips.

A memory structure is described, which includes a substrate, a word line structure, a bit line contact, and a bit line. The substrate has a trench. The word line structure is disposed in the trench of the substrate. The word line structure includes a word line, a gate dielectric layer, and a capping layer. The word line is disposed in the trench. The gate dielectric layer is disposed between the word line and the substrate. The capping layer covers the word line. The capping layer includes a first material film, and a dielectric constant of the first material layer is smaller than a dielectric constant of silicon nitride. The bit line contact is disposed on a portion of the trench and a portion of the capping layer. The bit line is disposed over the bit line contact and electrically connected to the bit line contact.