A carrier tape holding electrical components to a reel around which the carrier tape is wound is provided. Furthermore, the present disclosure is related to a pick-and-place apparatus for receiving this carrier tape and for picking and placing the electrical components arranged in the carrier tape. The carrier tape according to an aspect of the present disclosure includes an adhesive film that forms a bottom wall of the cavities in which a plurality of electrical components is arranged. The adhesive of the adhesive film is configured to substantially release the attachment of the electrical component as a result of heating the adhesive and/or as a result of irradiating the adhesive using light, such as visible light, infrared light, or ultraviolet light, for the purpose of allowing the electrical component to be removed from the cavity using a pick-and-place apparatus.

Method comprising the following steps: i) manufacturing components on a face of a substrate fastened to a first temporary substrate, ii) fastening a second temporary substrate onto the substrate, iii) removing the first temporary substrate, iv) manufacturing components on another face of the substrate, the first and second temporary substrates having surface areas greater than the surface area of the substrate of interest, during step ii), an adhesive film is disposed between the substrate and the first temporary substrate or between the substrate and the second temporary substrate, the adhesive film forming a lateral band around the substrate and adhering to the temporary substrates, the adhesion energy E.sub.1 between the substrate of interest and the first temporary substrate being greater than the adhesion energy E.sub.2 between the substrate of interest and the second temporary substrate, the adhesion energy E.sub.31 between the first temporary substrate and the adhesive film being lower than the adhesion energy E.sub.32 between the second temporary substrate and the adhesive film.

Differential-movement transfer stamps for holding microelectronics substrates and/or one or more microelectronic-device dies. Each differential-movement transfer stamp is configured to temporarily securely hold corresponding respective microelectronics substrates for handling and/or during die portioning and/or to temporarily securely hold microelectronic-device dies, for example, for efficient mass transfer and precision placement of the microelectronic-device dies. In some embodiments, each differential-movement transfer stamp includes a plurality of functional units that each comprise or are otherwise associated with one or more dimension-changing components that are used for temporarily securing a microelectronics substrate to the differential-movement transfer stamp and/or for releasing the microelectronics substrate or microelectronic-device dies from the differential-movement transfer stamp. Various uses of the disclosed differential-movement transfer stamps, such as semiconductor processing and mass transfer for making electronic devices such as microLED displays, sensor arrays, and detector arrays, are also described.

A method of fabricating a wide bandgap device includes providing a thin native substrate. An epitaxial layer is grown on a surface of the native substrate. After growing the epitaxial layer, a handle substrate is attached to the opposite surface of the native substrate by way of an interface layer. With the handle substrate providing mechanical support, wide bandgap devices are fabricated in the epitaxial layer using a low-temperature fabrication process. The handle substrate is detached from the native substrate after fabrication of the wide bandgap devices.

A semiconductor package using a coreless signal distribution structure (CSDS) is disclosed and may include a CSDS comprising at least one dielectric layer, at least one conductive layer, a first surface, and a second surface opposite to the first surface. The semiconductor package may also include a first semiconductor die having a first bond pad on a first die surface, where the first semiconductor die is bonded to the first surface of the CSDS via the first bond pad, and a second semiconductor die having a second bond pad on a second die surface, where the second semiconductor die is bonded to the second surface of the CSDS via the second bond pad. The semiconductor package may further include a metal post electrically coupled to the first surface of the CSDS, and a first encapsulant material encapsulating side surfaces and a surface opposite the first die surface of the first semiconductor die, the metal post, and a portion of the first surface of the CSDS.

A source wafer for use in a micro-transfer printing process. The source wafer comprising: a wafer substrate; a photonic component, provided in a device coupon, the device coupon being attached to the wafer substrate via a release layer; and one or more etch stop layers, located between the photonic component and the wafer substrate.

A method for transferring microstructures, comprising at least the steps of: (i) bonding a plurality of microstructures formed on one surface of a supplier substrate to a silicone-based rubber layer formed on a donor substrate; (ii) separating some or all of the plurality of microstructures from the supplier substrate and transferring the some or all of the plurality of microstructures to the donor substrate through the silicone-based rubber layer to produce the donor substrate having the to plurality of microstructures temporality fixed thereon; (iii) washing or neutralizing the donor substrate having the plurality of microstructures temporality fixed thereon; (iv) drying the washed or neutralized donor substrate having the plurality of microstructures temporality fixed thereon; and (v) transferring the dried donor substrate having the plurality of microstructures temporality fixed thereof so that the donor substrate can be subjected to a subsequent step. According to the method, a plurality of steps can be carried out while temporality fixing microstructures on a single donor substrate, and therefore it becomes possible to achieve the transfer of the microstructures with high efficiency without increasing the number of steps.

Selective donor plates comprising at least one raised “mesa” and a release layer disposed over the top mesa surface are described, as well as their methods of use and their methods of fabrication. The use of selective donor plates including mesas and a release layer may enable reduced standoff distances and misplacement of components, as well as improve assembly time of devices.

It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method; removing a semiconductor substrate by polishing to expose a circuit element; joining a transfer substrate to an exposed surface of the circuit element; and detaching the support substrate from the circuit element after joining the transfer substrate.

A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.