Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

A temporary adhesion method for temporarily adhering a wafer to a support via a temporary adhesive layer, the wafer having a first main surface including a circuit and a second main surface to be processed, the second main surface being located on an opposite side to the first main surface, wherein a temporary adhesion between the first main surface of the wafer and the support is performed via the temporary adhesive layer including a dry adhesive fiber structure having a plurality of pillar structures.

This disclosure provides a communication device and a manufacturing method thereof. The manufacturing method of the communication device includes the following steps: providing a first dielectric layer, wherein the first dielectric layer includes a first region and a second region, and the first dielectric layer has a first surface and a second surface opposite to the first surface; providing a second dielectric layer; combining the first dielectric layer and the second dielectric layer with a sealing element, so that the sealing element is disposed between the first surface of the first dielectric layer and a third surface of the second dielectric layer; after combining the first dielectric layer and the second dielectric layer, thinning the second surface of the first dielectric layer; and disposing a first communication element on the first surface of the first dielectric layer in the first region.

A method includes bonding a first wafer to a second wafer, performing a trimming process on the first wafer, and depositing a sidewall protection layer contacting a sidewall of the first wafer. The depositing the sidewall protection layer includes depositing a high-density material in contact with the sidewall of the first wafer. The sidewall protection layer has a density higher than a density of silicon oxide. The method further includes removing a horizontal portion of the sidewall protection layer that overlaps the first wafer, and forming an interconnect structure over the first wafer. The interconnect structure is electrically connected to integrated circuit devices in the first wafer.

A method for forming a plurality of semiconductor devices includes forming a plurality of trenches extending from a first lateral surface of a semiconductor wafer towards a second lateral surface of the semiconductor wafer. The method further includes filling a portion of the plurality of trenches with filler material. The method further includes thinning the semiconductor wafer from the second lateral surface of the semiconductor wafer to form a thinned semiconductor wafer. The method further includes forming a back side metallization layer structure on a plurality of semiconductor chip regions of the semiconductor wafer after thinning the semiconductor wafer. The method further includes removing a part of the filler material from the plurality of trenches after forming the back side metallization layer structure to obtain the plurality of semiconductor devices.

Handler wafers and methods of handling a wafer include positioning a handler, which is attached to a wafer by a bonding layer that comprises a debonding layer, an optical enhancement layer, and an anti-reflection layer. The handler is debonded from the wafer using a laser that emits laser energy at a wavelength that is absorbed by the debonding layer and that is confined to the debonding layer by the optical enhancement layer, such that the material of the debonding layer ablates when exposed to the laser energy to release the wafer.

There is provided a method for transforming an electronic device from an initial state, wherein the device includes a first substrate and a second substrate, the first and second substrates being joined by means of a bonding interfaced using their respective first faces, wherein the first substrate includes at least one cavity, produced using the first face of the first substrate, the cavity including a bottom bordered by at least one peripheral region and being at least partially filled with a buffer layer, in the bottom of the cavity, and wherein the first face of the second substrate is at least partly opposite the cavity of the first substrate. The method also includes a step of removing the bottom of the cavity of the first substrate from a first face, opposite to the first face of the first substrate.

A film peeling device preventing deformation or other defect of substrates occurring in the process of conveying films adhered up to the substrate leading ends while peeling from the substrate, protecting the substrate from damage, and avoiding deterioration of the substrate quality. The constitution is composed of a substrate holding mechanism for holding the leading end of a substrate by linear contact, an adhering and peeling mechanism for peeling films by an adhesive force from the substrate held by the substrate holding mechanism, a film holding tool for gripping individually the leading ends of the films adhered to the substrate both sides being wound and lifted by the adhering and peeling mechanism, a film conveying unit drive mechanism for conveying the film holding tool gripping the films in the substrate opposite direction conveying direction, and a recovery container accommodating the films being gripped and conveyed by the film holding tool.

A carrier tape may include a tape, a plurality of pockets, and a plurality of vents in each of the plurality of pockets. The plurality of vents may provide a vapor egress path for vapor that may occur during a dry bake process of the carrier tape.

A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.