Semiconductor devices having recessed edges with plated structures, semiconductor assemblies formed therefrom, and associated systems and methods are disclosed herein. In one embodiment, a semiconductor assembly includes a first semiconductor device and a second semiconductor device. The first semiconductor device can include an upper surface and a first dielectric layer over the upper surface, the second semiconductor device can include a lower surface and a second dielectric layer over the lower surface, and the first and second dielectric layers can be bonded to couple the first and second semiconductor devices. The first and second dielectric layers can each include a plurality of inwardly extending recesses exposing a plurality of metal structures on the respective upper and lower surfaces, and the upper surface recesses and metal structures can correspond to the lower surface recesses and metal structures. The metal structures can be electrically coupled by plated structures positioned in the recesses.

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

A carrier wafer, a structure, and a method are disclosed. The carrier wafer includes a wafer layer having a first surface and a second surface opposite the first surface, a first antireflective coating (ARC) layer positioned on the first surface of the wafer layer, a second ARC layer positioned on a surface of the first ARC layer opposite the wafer layer, and a thin release layer positioned on a surface of the second ARC layer opposite the first ARC layer. The structure includes the carrier wafer and a semiconductor device substrate positioned over the thin release layer of the carrier wafer. The method includes obtaining a wafer layer, forming an ARC layer on a surface of the wafer layer, forming a second ARC layer on a surface of the first ARC layer opposite the wafer layer, and forming a thin release layer on the second ARC layer.

A method provides a structure having a fin oriented lengthwise and widthwise along first and second directions respectively, an isolation structure adjacent to sidewalls of the fin, and first and second source/drain (S/D) features over the fin. The method includes forming an etch mask exposing a first portion of the fin under the first S/D feature and covering a second portion of the fin under the second S/D feature; removing the first portion of the fin, resulting in a first trench; forming a first dielectric feature in the first trench; and removing the second portion of the fin to form a second trench. The first dielectric feature and the isolation structure form first and second sidewalls of the second trench respectively. The method includes laterally etching the second sidewalls, thereby expanding the second trench along the second direction and forming a via structure in the expanded second trench.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

A method for manufacturing a semiconductor device includes at least the following three steps: (A) A step of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer; (B) A step of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer; and (C) A step of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. The adhesive film includes a base material layer and an ultraviolet-curable adhesive resin layer provided on one surface side thereof. The adhesive resin layer includes an ultraviolet-curable adhesive resin, and a saturated electrostatic potential V.sub.1 of a surface of the adhesive resin layer after ultraviolet curing, which is measured using a specific method, is equal to or less than 2.0 kV.

A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

A semiconductor device includes a semiconductor layer that includes a semiconductor substrate having a first thickness and has a main surface, a main surface electrode that is arranged at the main surface and has a second thickness less than the first thickness, and a pad electrode that is arranged on the main surface electrode and has a third thickness exceeding the first thickness.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer and control circuits; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; forming at least one third level above the at least one second level; performing a second etch step including etching holes within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where each of the first memory cells include one first transistor, where each of the second memory cells include one second transistor, where at least one of the first or second transistors has a channel, a source, and a drain having a same doping type.

A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.