Disclosed is a method for fabricating a terahertz device, the method including providing a substrate, doping a conductive impurity on an upper surface of the substrate to form an electrode layer, patterning the electrode layer to form antenna electrodes, and forming a photomixer between the antenna electrodes.

A transistor includes a channel layer, a gate stack, and source/drain regions. The channel layer includes a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer. Orientations of the hBN flakes are substantially aligned. The gate stack is over the channel layer. The source/drain regions are aside the gate stack.

A semiconductor device, the device including: a first silicon layer including a first single crystal silicon layer and a plurality of first transistors; a first metal layer disposed over the first single crystal silicon layer; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer; and a via disposed through the second level, where the via has a diameter of less than 450 nm, where the via includes tungsten, and where a typical thickness of the fifth metal layer is greater than a typical thickness of the second metal layer by at least 50%.

A semiconductor device, the device including: a first silicon layer including a first single crystal silicon layer and a plurality of first transistors; a first metal layer disposed over the first single crystal silicon layer; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer; and a via disposed through the second level, where the via has a diameter of less than 450 nm, where the via includes tungsten, and where a typical thickness of the fifth metal layer is greater than a typical thickness of the second metal layer by at least 50%.

A display substrate includes a first display region and a second display region. The display substrate may include: a first base substrate; a second base substrate; a first barrier layer and a light emitting unit. The first base substrate includes a first through region penetrating the first base substrate, and the first barrier layer includes a second through region penetrating the first barrier layer. The second base substrate includes a first substrate sub-portion located in the first display region, the first substrate sub-portion penetrates the second through region, and at least a portion of the first substrate sub-portion is located in the first through region. The display substrate includes a recessed portion. The second base substrate includes a first surface located in the first display region and a second surface located in the second display region, and the first surface and the second surface are formed as a flat surface.

A tunneling device includes a first semiconductor portion disposed on a first oxide substrate, a second semiconductor portion disposed on the first semiconductor portion, and an intermediate layer disposed between the first semiconductor portion and second semiconductor portion. The intermediate layer is a natural oxide film obtained by naturally oxidizing one surface of the second semiconductor portion for a predetermined time.

Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires above a fin. The fin includes a dopant diffusion blocking layer on a first semiconductor layer, and a second semiconductor layer on the dopant diffusion blocking layer. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires.

A method of fabricating a wide bandgap device includes providing a thin native substrate. An epitaxial layer is grown on a surface of the native substrate. After growing the epitaxial layer, a handle substrate is attached to the opposite surface of the native substrate by way of an interface layer. With the handle substrate providing mechanical support, wide bandgap devices are fabricated in the epitaxial layer using a low-temperature fabrication process. The handle substrate is detached from the native substrate after fabrication of the wide bandgap devices.

One or more semiconductor structures and/or methods for forming support structures for semiconductor structures are provided. A first porosification layer is formed over a semiconductor substrate. A first epitaxial layer is formed over the first porosification layer. A second porosification layer is formed from a first portion of the first epitaxial layer and a support structure is formed from a second portion of the first epitaxial layer.

The present invention provides a display panel and manufacturing method thereof, the method including following steps: providing a driving backplane and a light-emitting substrate, and bonding the driving backplane and the light-emitting substrate; patterning the light-emitting substrate to form a pixel array; forming a thin film packaging layer on an outside of the pixel array, the thin film packaging layer completely covering the pixel array; forming quantum dots on top of the thin film packaging layer to form a multi-color display; forming a reflective array between two adjacent quantum dots to avoid optical crosstalk between the pixel arrays. The display panel and the method of the present invention break through the physical limit of the high PPI, high-precision metal mask, which can realize the display of 2000 and higher PPI, and can prevent the optical crosstalk between the pixel arrays.