A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

The present disclosure provides a micro light emitting diode transfer device and a micro light emitting diode transfer method. The micro light emitting diode transfer device includes a holding member, a light source, and a liquid crystals light valve. The liquid crystals light valve is disposed on a transmission path of planar light and includes a plurality of sub light valves. The micro light emitting diodes of irradiated part can be separated from the transfer substrate and adhere to a target substrate, and thereby the micro light emitting diodes can be selectively transferred.

In an embodiment a method includes providing a donor substrate comprising a sacrificial layer, a connecting layer arranged on the sacrificial layer, and a plurality of semiconductor components arranged on the sacrificial layer, the connecting layer at least locally passing fully through the sacrificial layer so that each semiconductor component is at least locally in direct contact with the connecting layer, performing a selection method for identifying defective semiconductor components, selectively applying a cover layer onto a defective semiconductor component, at least one semiconductor component arranged directly adjacent to the defective semiconductor component and an intermediate region located between these semiconductor components, selectively etching the sacrificial layer, wherein the cover layer reduces or avoids etching the sacrificial layer in the intermediate region and removing the semiconductor components from the donor substrate, the defective semiconductor component remaining on the donor substrate.

A method is provided for fabricating an encapsulated emissive element. Beginning with a growth substrate, a plurality of emissive elements is formed. The growth substrate top surface is conformally coated with an encapsulation material. The encapsulation material may be photoresist, a polymer, a light reflective material, or a light absorbing material. The encapsulant is patterned to form fluidic assembly keys having a profile differing from the emissive element profiles. In one aspect, prior to separating the emissive elements from the handling substrate, a fluidic assembly keel or post is formed on each emissive element bottom surface. In one variation, the emissive elements have a horizontal profile. The fluidic assembly key has horizontal profile differing from the emissive element horizontal profile useful in selectively depositing different types of emissive elements during fluidic assembly. In another aspect, the emissive elements and fluidic assembly keys have differing vertical profiles useful in preventing detrapment.

A method of preparing a device coupon for a micro-transfer printing process from a multi-layered stack located on a device wafer substrate. The multi-layered stack comprises a plurality of semiconductor layers. The method comprises steps of: (a) etching the multi-layered stack to form a multi-layered device coupon, including an optical component; and (b) etching a semiconductor layer of the multi-layered device coupon to form one or more tethers, said tethers securing the multi-layered device coupon to one or more supports.

A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

A method of manufacturing a display apparatus including steps of forming a plurality of light emitting diode chips spaced apart from one another at a predetermined interval on a first manufacturing substrate and transferring the light emitting diode chips to a second manufacturing substrate by laser irradiation, in which the light emitting diode chips include a light emitting structure including a first-type semiconductor layer and a second-type semiconductor layer, a first-type electrode disposed on the first-type semiconductor layer, and a second-type electrode disposed on the second-type semiconductor layer.

A method of manufacturing a fingerprint sensor component having a component outline for integration into an electronic device, the method comprising the steps of: providing a fingerprint sensor package having a sensing surface, a connection surface opposite the sensing surface, and sides connecting the sensing surface and the connection surface, the connection surface having connectors for allowing electrical connection of the fingerprint sensor component to the electronic device; arranging the fingerprint sensor package on a temporary carrier with the connection surface facing the temporary carrier; and adding material at least around the sides of the fingerprint sensor package, while leaving the connection surface of the fingerprint sensor package uncovered.

Discussed is an assembly substrate used in a display manufacturing method for placing semiconductor light-emitting devices to predetermined positions thereof using an electric field and a magnetic field, the assembly substrate including a base part; a plurality of assembly electrodes extending in one direction and disposed in parallel on the base part; a dielectric layer disposed on the base part to cover the plurality of assembly electrodes; and partition walls disposed on the dielectric layer and defining cells at predetermined intervals along the one direction of the plurality of assembly electrodes so as to overlap portions of the plurality of assembly electrodes, and the semiconductor light-emitting devices being placed into the cells, respectively, wherein a protrusion part protrudes inward from at least one of inner surfaces of each of the cells.

Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes an integrated circuit structure, a first die stack and a dummy die. The first die stack includes a plurality of first die structures and is bonded to the integrated circuit structure at a first side of the first die stack. The dummy die includes a plurality of through substrate vias, is located aside the first die stack and is electrically connected to the integrated circuit structure at the first side of the first die stack. In some embodiments, the height of the through substrate vias of the dummy die is the same as the height of the first die stack.