A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.

Disclosed in the present specification are a substrate for transferring, with high reliability, a semiconductor light emitting element, and a method for manufacturing a display device by using same. Particularly, when a semiconductor light emitting element is self-assembled on an assembly substrate by using an electromagnetic field, an assembly groove in which a semiconductor light emitting element for alignment is assembled is formed in the assembly substrate. The semiconductor light emitting element for alignment, assembled in the assembly groove, is used for alignment in a step of being transferred to a final wiring substrate. Unlike conventional alignment keys, the semiconductor light emitting element for alignment reflects an alignment error of semiconductor light emitting elements that occurs during a transfer process after assembly. Therefore, when semiconductor light emitting elements are transferred to a wiring substrate on the basis of the semiconductor light emitting element for alignment, transfer accuracy can be improved.

According to one embodiment, a wafer for electronic components, includes a sapphire substrate including a first surface and a second surface on an opposite side to the first surface and a plurality of electronic components located on a side of the first surface, and the sapphire substrate includes trench portions located between respective adjacent electronic components, and the trench portions extend linearly in plan view.

A micro-LED manufacturing device includes: a wafer stage on which a wafer is positioned; a substrate stage on which a substrate is positioned; a lower base formed below the substrate stage; a first driving member formed on the substrate stage so as to move the wafer stage; and a second driving member formed on the lower base so as to move the substrate stage. The micro-LED manufacturing device is formed such that the wafer stage moves over the substrate stage, and thus the substrate stage and the wafer stage can move synchronously with respect to the lower base.

A circuit-board component and a manufacturing method thereof, and a light-emitting component and a manufacturing method thereof are provided in the disclosure. The light-emitting component includes the circuit-board component. The circuit-board component includes a circuit hoard, where multiple chip bonding areas are defined on the circuit board, and a weakening layer disposed on the circuit board and defining multiple cavities, where one chip bonding area corresponds to one cavity.

A method for mass transfer, a light-emitting diode (LED) display device, and a display apparatus are provided. The method includes: applying an insulating-adhesive on a growth substrate, where the insulating-adhesive applied is between two adjacent LED chips; placing the growth substrate above a display backplane, where a distance between the growth substrate and the display backplane after placing is greater than a height of an LED chip; forming an insulating-adhesive column between the growth substrate and the display backplane by softening the insulating-adhesive through heating, where the softened insulating-adhesive subjected to heating is adhered to the display backplane; separating the LED chip from the growth substrate, to make the separated LED chip fall onto a corresponding pad-group through a channel formed by insulating-adhesive columns around the separated LED chip; and bonding the fallen LED chip with the corresponding pad-group on the display backplane.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

The present disclosure provides a chipset and a manufacturing method thereof. The chipset includes a logic chip, an input/output chip, and an interposer. The logic chip includes a plurality of first bonding components disposed in the first device layer. The input/output chip includes a plurality of second bonding components disposed in the second device layer. The interposer includes a plurality of third bonding components disposed in the third device layer. The logic chip is directly bonded to the first portion of the plurality of third bonding components of the interposer in a pad-to-pad manner through the first portion of the plurality of first bonding components, and the input/output chip is directly bonded to the second portion of the plurality of third bonding components of the interposer in a pad-to-pad manner through the plurality of second bonding components.