A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, an encapsulant and a redistribution structure. The encapsulant laterally encapsulates the semiconductor die. The redistribution structure is disposed on the encapsulant and electrically connected with the semiconductor die, wherein the redistribution structure comprises a first conductive via, a first conductive wiring layer and a second conductive via stacked along a stacking direction, the first conductive via has a first terminal surface contacting the first conductive wiring layer, the second conductive via has a second terminal surface contacting the first conductive wiring layer, an area of a first cross section of the first conductive via is greater than an area of the first terminal surface of the first conductive via, and an area of a second cross section of the second conductive via is greater than an area of the second terminal surface of the second conductive via.

Provide are a transfer system and a transfer method. The transfer system is configured to transfer chips and includes a temporary substrate and a transfer device. The temporary substrate has a first surface and a second surface opposite to each other. There is a first angle between the second surface and the first surface. The transfer device has a transfer substrate and a plurality of transfer heads provided on the transfer substrate. The transfer substrate has a third surface and a fourth surface opposite to each other, and there is a second angle between the fourth surface and the third surface. The plurality of transfer heads are located at intervals on the fourth surface, and a side surface of the above-mentioned transfer head that faces away from the transfer substrate is parallel to the fourth surface.

Implementations of methods of making a semiconductor device may include: providing a partial semiconductor wafer. The method may also include providing a wafer holder including a tape portion with one or more openings through the tape portion. The method may include mounting the partial semiconductor wafer over the one or more openings in the tape portion of the wafer holder and providing an electrical connection to the partial semiconductor wafer through the one or more openings in the tape portion during probe test.

A method for transferring at least one chip, from a first support to a second support, includes forming, while the chip is assembled to the first support, an interlayer in the liquid state between, and in contact with, a front face of the chip and an assembly surface of a face of the second support and a solidification of the interlayer. Then, the chip is detached from the first support while maintaining the interlayer in the solid state.

A method of making a semiconductor device may include providing a large semiconductor die comprising conductive interconnects with a first encapsulant disposed over four side surfaces of the large semiconductor die, over the active surface of the large semiconductor die, and around the conductive interconnects. A first build-up interconnect structure may be formed over the large semiconductor die and over the first encapsulant. Vertical conductive interconnects may be formed over the first build-up interconnect structure and around an embedded device mount site. An embedded device comprising through silicon vias (TSVs) may be disposed over the embedded device mount site. A second encapsulant may be disposed over the build-up structure, and around at least five sides of the embedded device. A second build-up structure may be formed disposed over the planar surface and configured to be electrically coupled to the TSVs of the embedded device and the vertical conductive interconnects.

A semiconductor package includes: a first substrate; a second substrate including a semiconductor element formed thereon; a film layer between the first substrate and the second substrate; and a molding member surrounding the second substrate, wherein the film layer includes a crystalline spherical silica filler distributed in a matrix.

A workpiece unit that includes a workpiece, a tape stuck to the workpiece; and an annular frame to which an outer circumferential edge of the tape is stuck and which has an opening defined centrally therein. The workpiece is disposed in the opening in the annular frame and supported on the annular frame by the tape, and at least one of the tape and the annular frame has an irreversible discoloring section that discolors in response to an external stimulus. Such a configuration makes it possible to determine whether or not a process involving an external stimulus has been carried out on the workpiece unit, based on the appearance of the workpiece unit (i.e., based on whether the irreversible discoloring section has been discolored or not).