Patent classifications
H01L2223/6688
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a semiconductor device. The semiconductor device includes a carrier having a first side and a second side adjacent to the first side. The semiconductor device also includes a first antenna adjacent to the first side and configured to operate at a first frequency and a second antenna adjacent to the second side and configured to operate at a second frequency different from the first frequency. An method of manufacturing a semiconductor device is also provided.
Patch on interposer package with wireless communication interface
A patch on interposer (PoINT) package is described with a wireless communications interface. Some examples include an interposer, a main patch attached to the interposer, a main integrated circuit die attached to the patch, a second patch attached to the interposer, and a millimeter wave radio die attached to the second patch and coupled to the main integrated circuit die through the interposer to communicate data between the main die and an external component.
FORWARDED SUPPLY VOLTAGE FOR DYNAMIC VOLTAGE AND FREQUENCY SCALING WITH STACKED CHIP PACKAGING ARCHITECTURE
Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die in a first layer; an interposer in a second layer not coplanar with the first layer, the first layer coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent interconnects; and a first conductive pathway and a second conductive pathway in the interposer coupling the first IC die and a second IC die. The first IC die is configured to transmit at a first supply voltage through the first conductive pathway to a second IC die, the second IC die is configured to transmit to the first IC die through the second conductive pathway at a second supply voltage simultaneously with the first die transmitting at the first supply voltage, and the first supply voltage is different from the second supply voltage.
SEMICONDUCTOR STRUCTURE AND ELECTRONIC DEVICE
The present disclosure provides a semiconductor structure including a first substrate having a first surface, a first semiconductor device package disposed on the first surface of the first substrate, and a second semiconductor device package disposed on the first surface of the first substrate. The first semiconductor device package and the second semiconductor device package have a first signal transmission path through the first substrate and a second signal transmission path insulated from the first substrate. The present disclosure also provides an electronic device.
Multiple band multiple mode transceiver front end flip-chip architecture and circuitry with integrated power amplifiers
An integrated circuit architecture and circuitry is defined by a die structure with a plurality of exposed conductive pads arranged in a grid of rows and columns. The die structure has a first operating frequency region with a first transmit and receive chain, and a second operating frequency region with a second transmit chain and a second receive chain. There is a shared region of the die structure defined by an overlapping segment of the first operating frequency region and the second operating frequency region with a shared power supply input conductive pad connected to the first transmit chain, the second transmit chain, the first receive chain, and the second receive chain, and a shared power detection output conductive pad connected to the first transmit chain and the second transmit chain.
TRANSISTOR
A transistor according to the disclosure includes a semiconductor substrate, a source pad provided on an upper surface of the semiconductor substrate, a plurality of source electrodes provided on the upper surface of the semiconductor substrate and arranged in an arrangement direction, the plurality of source electrodes each including a first end connected to the source pad and a second end on a side opposite to the source pad, a plurality of drain electrodes arranged alternately with the plurality of source electrodes in the arrangement direction, a gate electrode and a first wire configured to connect the second ends of a plurality of central electrodes provided at a central part of the semiconductor substrate in the arrangement direction among the plurality of source electrodes, and not to connect the second ends of the source electrodes other than the plurality of central electrodes.
Electronic package and electronic device having the electronic package
An electronic package includes: a carrier structure; a first electronic component disposed on the carrier structure; a first insulating layer formed on the carrier structure; a first antenna structure coupled to the first insulating layer and electrically connected to the first electronic component; and a second antenna structure embedded in the carrier structure. As such, the electronic package provides more antenna functions within a limited space so as to improve the signal quality and transmission rate of electronic products. An electronic device having the electronic package is also provided. The electronic device is applicable to an electronic product having an antenna function.
Antenna module
An antenna module includes a fan-out semiconductor package including an IC, an encapsulant encapsulating at least a portion of the IC, a core member having a first side surface facing the IC or the encapsulant, and a connection member including at least one wiring layer electrically connected to the IC and the core member and at least one insulating layer; and an antenna package including a plurality of first directional antenna members configured to transmit or receive a first RF signal. The fan-out semiconductor package further includes at least one second directional antenna member disposed on a second side surface of the core member opposing the first side surface of the core member, stood up from a position electrically connected to at least one wiring layer, and configured to transmit or receive a second RF signal.
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a semiconductor device. The semiconductor device includes a carrier having a first side and a second side adjacent to the first side. The semiconductor device also includes a first antenna adjacent to the first side and configured to operate at a first frequency and a second antenna adjacent to the second side and configured to operate at a second frequency different from the first frequency. An method of manufacturing a semiconductor device is also provided.
Circuit module and communication device
A circuit module includes a first wiring substrate having a first main surface and a plurality of first components mounted on the first main surface. The plurality of first components includes a multilayer component formed as a single chip by being sealed using resin members. The multilayer component includes a second wiring substrate having a second main surface and a third main surface that face each other, a second component mounted on the second main surface, and a third component mounted on the third main surface.