Embodiments of methods for producing direct bonded structures and methods for forming direct bonded structures are disclosed. The direct bonded structures may include elements comprising active electronics, microelectromechanical systems, optical elements, and so forth.

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

Provided is a pressurized semiconductor package including a lead frame including a pad board and a first terminal, a semiconductor chip, pressurizing members stacked to pressurize the semiconductor chip, and a package housing. The semiconductor chip is physically pressurized by the pressurizing members and is electrically connected to improve durability of the semiconductor package and to simplify a manufacturing process.

Provided is a pressurized semiconductor package including a lead frame including a pad board and a first terminal, a semiconductor chip, pressurizing members stacked to pressurize the semiconductor chip, and a package housing. The semiconductor chip is physically pressurized by the pressurizing members and is electrically connected to improve durability of the semiconductor package and to simplify a manufacturing process.

A magnetic sensor chip includes a magnetic sensor including a magneto-resistance element and connection terminals electrically connected to the magnetic sensor. Signal terminals are separated from the current path and are electrically connected to the connection terminals by bonding wires. A support is separated from the current path, is at a different potential from the current path, and supports the magnetic sensor chip. The magnetic sensor chip is at a position overlapping the current path when viewed in a direction in which the magnetic sensor chip and the support are arrayed.

A semiconductor device includes an upper-level layer having a cell array region, a cell contact region and a dummy region on a substrate. The upper-level layer includes a semiconductor layer, a cell array structure including first and second stack structures sequentially stacked on the semiconductor layer of the cell array region, the first and second stack structures comprising stacked electrodes, a first staircase structure on the semiconductor layer of the cell contact region, the electrodes extending from the cell array structure into the first staircase structure such that the cell array structure is connected to the first staircase structure, a vertical channel structure penetrating the cell array structure, a dummy structure in the dummy region, the dummy structure at the same level as the second stack structure, the dummy structure including stacked first layers, and cell contact plugs in the cell contact region and connected to the first staircase structure.

A semiconductor device includes an upper-level layer having a cell array region, a cell contact region and a dummy region on a substrate. The upper-level layer includes a semiconductor layer, a cell array structure including first and second stack structures sequentially stacked on the semiconductor layer of the cell array region, the first and second stack structures comprising stacked electrodes, a first staircase structure on the semiconductor layer of the cell contact region, the electrodes extending from the cell array structure into the first staircase structure such that the cell array structure is connected to the first staircase structure, a vertical channel structure penetrating the cell array structure, a dummy structure in the dummy region, the dummy structure at the same level as the second stack structure, the dummy structure including stacked first layers, and cell contact plugs in the cell contact region and connected to the first staircase structure.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an underfill layer. The first semiconductor package includes a plurality of lower semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the lower semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of lower semiconductor chips, wherein the second semiconductor package includes a plurality of upper semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of upper semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of lower semiconductor chips. The underfill layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.