A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

A package includes a semiconductor carrier, a first die, a second die, a redistribution structure, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The redistribution structure is over the second die. The electron transmission path extends from the semiconductor carrier to the redistribution structure. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die, and a third portion of the electron transmission path is aside the second die.

A package includes a semiconductor carrier, a first die, a second die, a redistribution structure, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The redistribution structure is over the second die. The electron transmission path extends from the semiconductor carrier to the redistribution structure. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die, and a third portion of the electron transmission path is aside the second die.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a photonic receiver; and a die coupled to the photonic receiver by interconnects, wherein the die includes a device layer between a first interconnect layer of the die and a second interconnect layer of the die. In still some embodiments, a microelectronic assembly may include a photonic transmitter; and a die coupled to the photonic transmitter by interconnects, wherein the die includes a device layer between a first interconnect layer of the die and a second interconnect layer of the die.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a photonic receiver; and a die coupled to the photonic receiver by interconnects, wherein the die includes a device layer between a first interconnect layer of the die and a second interconnect layer of the die. In still some embodiments, a microelectronic assembly may include a photonic transmitter; and a die coupled to the photonic transmitter by interconnects, wherein the die includes a device layer between a first interconnect layer of the die and a second interconnect layer of the die.

A light emitting device includes: a package in which a recess is defined; a light emitting element mounted on a bottom surface defining the recess; a first reflecting layer covering lateral surfaces defining the recess; and a second reflecting layer covering the bottom surface defining the recess, wherein the second reflecting layer is in contact with the first reflecting layer, wherein at least a portion of lateral surfaces of the light emitting element is exposed from the second reflecting layer.

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.