A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.

A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

A packaged integrated circuit device includes a frame having a cavity therein and an inner semiconductor chip within the cavity. A lower re-distribution layer is provided, which extends adjacent lower surfaces of the frame and the inner semiconductor chip. The lower re-distribution layer has an opening therein which at least partially exposes the lower surface of the inner semiconductor chip. A lower semiconductor chip is provided, which extends adjacent the lower surface of the inner semiconductor chip, and within the opening in the lower re-distribution layer. This lower re-distribution layer includes: (i) an insulating layer covering the lower surface of the frame, (ii) a re-distribution pattern disposed on the insulating layer, and (iii) a barrier layer, which is disposed on the insulating layer and surrounds at least a portion of the lower semiconductor chip.

A chip package structure includes a substrate, at least two chips, a plurality of first pads, a plurality of first micro bumps, and a bridging element. The substrate has a first surface and a second surface opposite to the first surface. The two chips are disposed on the first surface of the substrate and are horizontally adjacent to each other. Each chip has an active surface. The first pads are disposed on the active surface of each of the chips. The first micro bumps are disposed on the first pads and have the same size. The bridging element is disposed on the first micro bumps such that one of the chips is electrically connected to another of the chips through the first pads, the first micro bumps, and the bridging element.

A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.

A method includes placing a package component over a carrier. The package component includes a device die. A core frame is placed over the carrier. The core frame forms a ring encircling the package component. The method further includes encapsulating the core frame and the package component in an encapsulant, forming redistribution lines over the core frame and the package component, and forming electrical connectors over and electrically coupling to the package component through the redistribution lines.