In an embodiment, a semiconductor package includes a semiconductor device embedded in an insulating layer, a contact pad having an area, and a vertical redistribution structure including substantially parallel vertical paths arranged in the insulating layer and extending perpendicular to the area of the contact pad. The substantially vertical paths are non-uniformly distributed over the area of the contact pad.

A package structure for a semiconductor device includes a first conductive layer, a second conductive layer, a first die, a second die, a plurality of first blind via pillars and a conductive structure. The first conductive layer has a first surface and a second surface. The first die and the second die respectively have an active surface and a back surface, which are disposed opposite to each other. There is a plurality of metal pads disposed on the active surface. The first die is attached to the first surface of the first conductive layer with its back surface, and the second die is attached to the second surface of the first conductive layer with its back surface. The first and second conductive layers, the first and second dies, the first blind hole pillars and conductive structure are covered by a dielectric material.

An electronics package includes an insulating substrate, an electrical component having a back surface coupled to a first surface of the insulating substrate, and an insulating structure surrounding at least a portion of a perimeter of the electrical component. A first wiring layer extends from the first surface of the insulating substrate and over a sloped side surface of the insulating structure to electrically couple with at least one contact pad on an active surface of the electrical component. A second wiring layer is formed on a second surface of the insulating substrate and extends through at least one via therein to electrically couple with the first wiring layer.

A semiconductor device package includes an interposer and a semiconductor device. The interposer has a sidewall defining a space. The semiconductor device is disposed within the space and in contact with the sidewall. An interposer includes a first surface, a second surface and a third surface. The first surface has a first crystal orientation. The second surface is opposite the first surface and has the first crystal orientation. The third surface connects the first surface to the second surface, and defines a space. An angle defined by the third surface and the first surface ranges from about 90 to about 120.

A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other.

An electronics package includes an insulating substrate, an electrical component having a back surface coupled to a first surface of the insulating substrate, and an insulating structure surrounding at least a portion of a perimeter of the electrical component. A first wiring layer extends from the first surface of the insulating substrate and over a sloped side surface of the insulating structure to electrically couple with at least one contact pad on an active surface of the electrical component. A second wiring layer is formed on a second surface of the insulating substrate and extends through at least one via therein to electrically couple with the first wiring layer.

An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.

A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.