In the present disclosure, a first semiconductor element of a bonded structure comprises a semiconductor-containing oxynitride bonding layer formed on a first substrate layer comprising a semiconductor material, e.g., a single crystal silicon. The semiconductor-containing oxynitride bonding layer is formed by exposing an upper surface of the first substrate layer to products of plasma containing nitrogen and oxygen at controlled plasma conditions. The second semiconductor element of the bonded structure may have a second substrate layer comprising a semiconductor material, e.g., a single crystal silicon, and a semiconductor-containing oxynitride bonding layer formed over the second substrate layer in the same way as the first semiconductor element. In some embodiments, the second semiconductor element may have a bonding layer comprising a dielectric material. After initial direct bonding of the first and second semiconductor elements, the bonded structure may go through an annealing process to strengthen the bonding.

In an embodiment, a package includes an encapsulant laterally surrounding a first integrated circuit device and a second integrated circuit device, wherein the first integrated circuit device includes a die and a heat dissipation structure over the die; a sealant disposed over the heat dissipation structure; an adhesive disposed over the second integrated circuit device; and a lid disposed over the sealant and the adhesive, wherein the lid includes a first cooling passage and a second cooling passage, the first cooling passage including an opening at a bottom of the lid and aligned to the heat dissipation structure, the second cooling passage including channels aligned to the second integrated circuit device and being distant from the bottom of the lid.

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.