Implementations described herein relate to various semiconductor device assemblies. In some implementations, an adhesive assembly configured for semiconductor die attachment includes one or more adhesive films capable of semiconductor die attachment, and one or more conductive elements embedded in the one or more adhesive films.

A polymerizable composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and a phosphor capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

A polymerizable composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and a phosphor capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

An oscillator includes a vibration element, an oscillation circuit configured to oscillate the vibration element and output an oscillation signal, a temperature sensor, a temperature compensation circuit configured to compensate for a frequency temperature characteristic of the vibration element based on an output signal of the temperature sensor. The vibration element is within a first case having a first atmosphere, and the oscillation circuit, the temperature sensor, and the first case are within a second case having a second atmosphere, whereby the first atmosphere has a higher thermal conductivity than the second atmosphere.

Analyte sensor connectors that connect analyte sensors, e.g., conductive members of analyte sensors, to other devices such as sensor electronics units, e.g., sensor control units, are provided. Also provided are systems that include analyte sensors, analyte sensor connectors, and analyte sensor electronics units, as well as methods of establishing and maintaining connections between analyte sensors and analyte sensor electronics units, and methods of analyte monitoring/detection. Also provided are methods of making analyte sensor connectors and systems that include analyte sensor connectors.

Analyte sensor connectors that connect analyte sensors, e.g., conductive members of analyte sensors, to other devices such as sensor electronics units, e.g., sensor control units, are provided. Also provided are systems that include analyte sensors, analyte sensor connectors, and analyte sensor electronics units, as well as methods of establishing and maintaining connections between analyte sensors and analyte sensor electronics units, and methods of analyte monitoring/detection. Also provided are methods of making analyte sensor connectors and systems that include analyte sensor connectors.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A1) having peeling properties, and a second metal (B1) and third metal (C1) facilitating the plating of the first metal (A1).

A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.

A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.