A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.

A process for batch fabrication of circuit components is disclosed via simultaneously packaging multiple circuit component dice in a matrix. Each die has electrodes on its tops and bottom surfaces to be electrically connected to a corresponding electrical terminal of the circuit component it's packaged in. For each circuit component in the matrix, the process forms preparative electrical terminals on a copper substrate. Component dice are pick-and-placed onto the copper substrate with their bottom electrodes landing on corresponding preparative electrical terminal. Horizontal conductor plates are then placed horizontally on top of the circuit component dice, with bottom surface at one end of each plate landing on the dice's top electrode. An opening is formed at the opposite end and has vertical conductive surfaces. A vertical conductor block is placed into the opening and lands on the preparative electrical terminal, and the opening's vertical conductive surfaces facing the top end side surface of the vertical block. A thermal reflow then simultaneously melts pre-applied soldering material so that each circuit component die and its vertical conductor block are soldered to the copper substrate below and its horizontal conductor plate above.

Provided is a semiconductor device capable of suppressing increase in size of a package and adjusting an amount of negative feedback. A power module as a semiconductor device includes an IGBT which is a switching element and a free wheel diode (FWD) parallelly connected to the switching element. The IGBT has, on a surface thereof, an emitter electrode and a gate electrode of the IGBT and a conductive pattern insulated from the emitter electrode and the gate electrode. The FWD has, on a surface thereof, an anode electrode of the FWD and a conductive pattern insulated from the anode electrode.

A device includes an interposer including an insulative layer between a lower metal layer and a first upper metal layer and a second upper metal layer, a semiconductor transistor die attached to the first upper metal layer and comprising a first lower main face and a second upper main face, with a drain or collector pad on the first main face and electrically connected to the first upper metal layer, a source or emitter electrode pad and a gate electrode pad on the second main face, a leadframe connected to the interposer and comprising a first lead connected with the first upper metal layer, a second lead connected with the source electrode pad, and a third lead connected with the second upper metal layer, and wherein an electrical connector that is connected between the gate electrode pad and the second upper metal layer is orthogonal to a first electrical connector.

Various embodiments may provide a semiconductor package. The semiconductor package may include a first electrical component, a second electrical component, a first heat sink, and a second heat sink bonded to a first package interconnection component and a second package interconnection component. The first package interconnection component and the second package interconnection component may provide lateral and vertical interconnections in the package.

A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.

A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.

The semiconductor module includes a first device that has an IGBT and a second device that has a reflux diode which is anti-parallel connected to the IGBT, which has a forward threshold voltage less than a reverse withstand voltage of the IGBT, and which has a forward breakdown voltage in excess of the reverse withstand voltage of the IGBT.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

Provided is a metal jointed body, joined by solid-phase joining in the atmosphere, in which no protrusion of molten joining material occurs, that improves dimensional stability. A metal jointed body is formed by (A) making Ag films of two metal laminated bodies opposed to each other, the metal jointed body being configured by sequentially laminating a Zn film and an Ag film on an Al substrate serving as a member to be joined, and (B) bringing the Ag films into contact with each other, then (C) heating is performed while pressurizing, and closely adhering and solid-phase joining the Ag films to each other. The completed metal jointed body is a portion where Al—Ag alloy layers are provided on both sides of an Ag—Zn—Al alloy layer to join the Al substrates to each other.