The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

A curable silicone composition for die bonding use contains at least (A) an organopolysiloxane having at least two alkenyl groups per molecule, (B) an organopolysiloxane having at least two siloxane units each represented by the formula: RHSiO (wherein R represents a monovalent hydrocarbon group having 1 to 12 carbon atoms and having no aliphatic unsaturated bond) per molecule, (C) a platinum-group metal-based catalyst for hydrosilylation reactions, (D) a hydrosilylation reaction inhibitor and (E) an adhesiveness-imparting agent, wherein the scorch time (ts1), which is defined in JIS K 6300-2, at a die bonding temperature is 20 to 60 seconds, and the 90% vulcanization time [tc(90)] with respect to the maximum torque value during the vulcanization time of 600 seconds is 300 to 500 seconds. The curable silicone composition for die bonding use according to the present invention can adhere a semiconductor chip to a support strongly.

Driving arrays of diodes. At least some of the example embodiments are methods of driving an array of diodes including: charging an inductor to increase an inductor current, the charging ceases when the inductor current reaches a predetermined threshold; driving the inductor current through a first portion of the array of diodes, the driving ceases prior to the inductor current reaching zero; and recirculating the inductor current through the inductor until a next charging event.

A 4D device comprises a 2D multi-core logic and a 3D memory stack connected through the memory stack sidewall using a fine pitch T&J connection. The 3D memory in the stack is thinned from the original wafer thickness to no remaining Si. A tongue and groove device at the memory wafer top and bottom surfaces allows an accurate stack alignment. The memory stack also has micro-channels on the backside to allow fluid cooling. The memory stack is further diced at the fixed clock-cycle distance and is flipped on its side and re-assembled on to a template into a pseudo-wafer format. The top side wall of the assembly is polished and built with BEOL to fan-out and use the T&J fine pitch connection to join to the 2D logic wafer. The other side of the memory stack is polished, fanned-out, and bumped with C4 solder. The invention also comprises a process for manufacturing the device. In another aspect, the invention comprises a 4D process and device for over 50 greater than 2D memory density per die and an ultra high density memory.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200 C., and wherein the following applies: c11c25 and c11c13c12.

One or more embodiments are directed to a semiconductor package that includes transparent encapsulation material and an opaque encapsulation material. In one embodiment, the opaque encapsulation material is thicker than the transparent encapsulation material; however, the outer surfaces of the opaque and the transparent encapsulation materials are coplanar with each other.

An electronic device includes a substrate and a die having an active surface where the die is disposed on the substrate. A sensor is disposed on the active surface of the die such that the sensor is exposed to an external environment. Electrical interconnects are disposed on the active surface of the die near a perimeter of the die. Conductive terminals have a first end attached to a contact surface of the electrical interconnects and a second end that attaches to an external terminal.

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200 C., and wherein the following applies: c11c25 and c11 c13c12.

A terrestrial vehicle lighting module which includes an electroluminescent source including at least one electroluminescent element, an electronic device designed to control the electroluminescent element, and an interposer electrically connecting the electroluminescent source and the electronic device.

An optical device package comprises a carrier having a first surface and a second surface recessed with respect to the first surface and a lid disposed on the second surface of the carrier.