A semiconductor device includes an integrated circuit, at least one outer seal ring, and at least one inner seal ring. The outer seal ring surrounds the integrated circuit. The outer seal ring includes a plurality of metal layers in a stacked configuration, and the metal layers are closed loops. The inner seal ring is disposed between the outer seal ring and the integrated circuit and separated from the outer seal ring. The inner seal ring has at least one gap extending from a region encircled by the inner seal ring to a region outside the inner seal ring.

A chip package includes a sensing chip, a computing chip, and a protective layer annularly surrounding the sensing chip and the computing chip. The sensing chip has a first conductive pad, a sensing element, a first surface and a second surface opposite to each other. And the sensing element is disposed on the first surface. The computing chip has a second conductive pad and a computing element. The protective layer is formed by lamination and at least exposes the sensing element. The chip package further includes a conductive layer underneath the second surface of the sensing chip and extending to be in contact with the first conductive pad and the second conductive pad.

A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.

An interposer includes a polycrystalline ceramic core disposed between a first surface and a second surface of the interposer, an adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the adhesion layer, and one or more electrically conductive vias extending from the first surface to the second surface through the polycrystalline ceramic core, the adhesion layer, and the barrier layer.

A chip package for optical sensing includes a substrate, and a semiconductor device positioned on the substrate and coupled to the substrate through a first conducting element. Two molding processes are applied, to form a first colloid body on the substrate so as to cover the semiconductor device and, on the first colloid body, to form a second colloid body which covers an optical device. The optical device is electrically connected to the substrate through a second conducting element. The light transmittance of the second colloid body exceeds that of the first colloid body.

A die includes a substrate, a conductive pad, a connector a protection layer, and a passivation layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector comprises a seed layer and a conductive post on the seed layer. The protection layer laterally covers the connector. The passivation layer is disposed between the protection layer and the conductive pad. The conductive post is separated from the passivation layer and the protection layer by the seed layer.

A light receiving element of the present disclosure adopts a configuration in which a path of a return current is minimized, and achieves excellent high-frequency transmission characteristics. In the light receiving element of the present disclosure, not only a signal path of a high-frequency electric signal processed by an optical receiving circuit but also a path of a return current returning through a ground side are straightened. A return current flowing in a direction opposite to a high-frequency signal from a PD flows in a ground pattern formed on a lower surface of the PD, which is in contact with ground potential of a PD sub-mount. The ground pattern on the lower surface of the PD realizes a flat high-frequency transmission characteristic, and in a multi-channel PD array, unnecessary resonance and radiation noise are suppressed, and inter-channel crosstalk is effectively reduced.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A semiconductor structure includes a packaged semiconductor device having at least one device, a conductive pillar, an encapsulant over the at least one device and surrounding the conductive pillar, wherein the conductive pillar extends from a first major surface to a second major surface of the encapsulant, and is exposed at the second major surface and the at least one device is exposed at the first major surface. The packaged device also includes a conductive shield layer on the second major surface of the encapsulant and on minor surfaces of the encapsulant and an isolation region at the second major surface of the encapsulant between the encapsulant and the conductive pillar such that the conductive shield layer is electrically isolated from the conductive pillar. The semiconductor structure also includes a radio-frequency connection structure over and in electrical contact with the conductive pillar at the second major surface of the encapsulant.

A package structure includes at least one die, an antenna element, and at least one through interlayer via. The antenna element is located on the at least one die. The at least one through interlayer via is located between the antenna element and the at least one die, wherein the antenna element is electrically connected to the at least one die through the at least one through interlayer via.