Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.

Stacked semiconductor die assemblies with die support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a support member attached to the package substrate. The support member can be separated from the first semiconductor die, and a second semiconductor die can have one region coupled to the support member and another region coupled to the first semiconductor die.

An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.

An interposer includes a polycrystalline ceramic core disposed between a first surface and a second surface of the interposer, an adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the adhesion layer, and one or more electrically conductive vias extending from the first surface to the second surface through the polycrystalline ceramic core, the adhesion layer, and the barrier layer.

Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

A method includes bonding a first package to a second package to form a third package. The first package is an Integrated Fan-Out (InFO) package including a plurality of package components, and an encapsulating material encapsulating the plurality of package components therein. The plurality of package components include device dies. The method further includes placing at least a portion of the third package into a recess in a Printed Circuit Board (PCB). The recess extends from a top surface of the PCB to an intermediate level between the top surface and a bottom surface of the PCB. Wire bonding is performed to electrically connect the third package to the PCB.

A semiconductor package and a method of forming the same are provided. The semiconductor package includes one or a plurality of chips on a substrate, bumps disposed below each of the one or plurality of chips, an underfill material layer on the substrate, on a side surface of each of the bumps, and extending to side surfaces of the one or plurality of chips, and a mold layer on the substrate and contacting the underfill material layer. The underfill material layer includes a first side portion, a second side portion on the first side portion and having a slope, steeper than a slope of the first side portion, and a third side portion on the second side portion and having a slope that is less steep than a slope of the second side portion.

A semiconductor device includes an integrated circuit, an outer seal ring, and an inner seal ring. The outer seal ring forms a first closed loop surrounding the integrated circuit. The inner seal ring is between the outer seal ring and the integrated circuit. The inner seal ring has a first seal portion surrounding the integrated circuit and a second seal portion spaced apart from the first seal portion, a first connector interconnecting the first seal portion and the second seal portion, and a second connector spaced apart from the first connector and interconnecting the first seal portion and the second seal portion. The first seal portion, the second seal portion, the first connector, and the second connector form a second closed loop.

A package structure include a ground plate, a semiconductor die, a molding compound, and an antenna element. The semiconductor die is located over the ground plate. The molding compound is located over the semiconductor die. The antenna element is located in the molding compound and overlaps with the ground plate along a stacking direction of the ground plate, the semiconductor die and the molding compound. The antenna element has a first side levelled with a first surface of the molding compound, and the ground plate is located between the semiconductor die and the antenna element.